Improved 150°C retention in Hf o.3O o.5N 0.2 memory device with low voltage and fast writing

S. H. Lin, H. J. Yang, H. L. Kao, F. S. Yeh, Albert Chin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

At 150°C under a fast 100 μs and low ±9VP/E voltage, the [TaN-Ir 3Si]-HfAlO-LaAlO 3-Hf 0.3O 0.5N 0.2-HfAlO-SiO 2-Si memory device shows good device integrity of a 3.2V initial ΔV th and 2.4V 10-year extrapolated retention. This only 25% retention decay at 150°C was achieved by double quantum barriers confining trapped carriers in deep Hf 0.3O 0.5N 0.2 well.

Original languageEnglish
Title of host publication66th DRC Device Research Conference Digest, DRC 2008
Pages61-62
Number of pages2
DOIs
StatePublished - 1 Dec 2008
Event66th DRC Device Research Conference Digest, DRC 2008 - Santa Barbara, CA, United States
Duration: 23 Jun 200825 Jun 2008

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Conference

Conference66th DRC Device Research Conference Digest, DRC 2008
CountryUnited States
CitySanta Barbara, CA
Period23/06/0825/06/08

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    Lin, S. H., Yang, H. J., Kao, H. L., Yeh, F. S., & Chin, A. (2008). Improved 150°C retention in Hf o.3O o.5N 0.2 memory device with low voltage and fast writing. In 66th DRC Device Research Conference Digest, DRC 2008 (pp. 61-62). [4800734] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2008.4800734