Improve the electrical properties of NILC poly-Si films using a gettering substrate

Yew-Chuhg Wu, Chen-Ming Hu, Chi Ching Lin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate polycrystalline silicon (poly-Si) thin-film transistors. However, this technology often leads to trapped Ni and NiSi2 precipitates, thus degrading the device performance. We proposed using α-Si-coated wafers as Ni-gettering substrates. After gettering process, the Ni impurity within the NILC poly-Si film and the leakage current were reduced.

Original languageEnglish
Title of host publicationIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
Pages13-14
Number of pages2
StatePublished - 1 Dec 2007
EventInternational Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan
Duration: 3 Jul 20076 Jul 2007

Publication series

NameIDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC 2007
CountryTaiwan
CityTaipei
Period3/07/076/07/07

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