Implications of waveform and thickness dependence of SiO2 breakdown on accelerated testing

E. Rosenbaum, R. Moazzami, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

10 Scopus citations

Abstract

Oxide breakdown characteristics under accelerated test conditions are different from those under normal operating conditions. While oxide lifetime under unipolar pulse stress is roughly equal to the DC lifetime multiplied by the reciprocal of the duty cycle, lifetime under bipolar pulse stress is extended by an additional factor of 40 or more. At the high electric fields used during accelerated testing, oxides with thickness greater than 15 nm suffer lifetime degradation which may be attributed to hole trapping. This will lead to overly conservative projections of lifetime under normal operating conditions.

Original languageEnglish
Title of host publication1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers, VTSA 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages214-218
Number of pages5
ISBN (Electronic)078030036X, 9780780300361
DOIs
StatePublished - 1 Jan 1991
Event1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991 - Taipei, Taiwan
Duration: 22 May 199124 May 1991

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)1930-8868

Conference

Conference1991 International Symposium on VLSI Technology, Systems, and Applications, VTSA 1991
CountryTaiwan
CityTaipei
Period22/05/9124/05/91

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