Implementation of surface acoustic wave vapor sensor using complementary metal-oxide-semiconductor amplifiers

Chia Sung Chiu; Ching Chun Chang; Chia Lin Ku; Kang Ming Peng; Erik S. Jeng; Wen Lin Chen; Guo Wei Huang; Lin-Kun Wu

doi:10.1143/JJAP.48.04C182

Implementation of surface acoustic wave vapor sensor using complementary metal-oxide-semiconductor amplifiers

Chia Sung Chiu^*, Ching Chun Chang, Chia Lin Ku, Kang Ming Peng, Erik S. Jeng, Wen Lin Chen, Guo Wei Huang, Lin-Kun Wu

^*Corresponding author for this work

National Chiao Tung University

Research output: Contribution to journal › Article

Abstract

A surface acoustic wave (SAW) vapor sensor is presented in this work. A SAW delay line oscillator on quartz substrate with the high gain complementary metal-oxide-semiconductor (CMOS) amplifier using a two-poly-two-metal (2P2M) 0.35 μm process was designed. The gain of the CMOS amplifier and its total power consumption are 20 dB and 70mW, respectively. The achieved phase noise of this SAW oscillator is -150 dBc/Hz at 100 kHz offset. The sensing is successfully demonstrated by a thin poly(epichlorohydrin) (PECH) polymer film on a SAW oscillator with alcohol vapor. This two-in-one sensor unit includes the SAW device and the CMOS amplifier provides designers with comprehensive model for using these components for sensor circuit fabrication. Furthermore it will be promising for future chemical and biological sensing applications.

Original language	English
Article number	04C182
Journal	Japanese Journal of Applied Physics
Volume	48
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.48.04C182
State	Published - 1 Apr 2009

Access to Document

10.1143/JJAP.48.04C182

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Implementation of surface acoustic wave vapor sensor using complementary metal-oxide-semiconductor amplifiers'. Together they form a unique fingerprint.

Cite this

Chiu, C. S., Chang, C. C., Ku, C. L., Peng, K. M., Jeng, E. S., Chen, W. L., Huang, G. W., & Wu, L-K. (2009). Implementation of surface acoustic wave vapor sensor using complementary metal-oxide-semiconductor amplifiers. Japanese Journal of Applied Physics, 48(4 PART 2), [04C182]. https://doi.org/10.1143/JJAP.48.04C182

@article{1cd28f76a77b4ac7b401b54336fed89d,

title = "Implementation of surface acoustic wave vapor sensor using complementary metal-oxide-semiconductor amplifiers",

abstract = "A surface acoustic wave (SAW) vapor sensor is presented in this work. A SAW delay line oscillator on quartz substrate with the high gain complementary metal-oxide-semiconductor (CMOS) amplifier using a two-poly-two-metal (2P2M) 0.35 μm process was designed. The gain of the CMOS amplifier and its total power consumption are 20 dB and 70mW, respectively. The achieved phase noise of this SAW oscillator is -150 dBc/Hz at 100 kHz offset. The sensing is successfully demonstrated by a thin poly(epichlorohydrin) (PECH) polymer film on a SAW oscillator with alcohol vapor. This two-in-one sensor unit includes the SAW device and the CMOS amplifier provides designers with comprehensive model for using these components for sensor circuit fabrication. Furthermore it will be promising for future chemical and biological sensing applications.",

author = "Chiu, {Chia Sung} and Chang, {Ching Chun} and Ku, {Chia Lin} and Peng, {Kang Ming} and Jeng, {Erik S.} and Chen, {Wen Lin} and Huang, {Guo Wei} and Lin-Kun Wu",

year = "2009",

month = apr,

day = "1",

doi = "10.1143/JJAP.48.04C182",

language = "English",

volume = "48",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 PART 2",

}

Implementation of surface acoustic wave vapor sensor using complementary metal-oxide-semiconductor amplifiers. / Chiu, Chia Sung; Chang, Ching Chun; Ku, Chia Lin; Peng, Kang Ming; Jeng, Erik S.; Chen, Wen Lin; Huang, Guo Wei; Wu, Lin-Kun.

In: Japanese Journal of Applied Physics, Vol. 48, No. 4 PART 2, 04C182, 01.04.2009.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Implementation of surface acoustic wave vapor sensor using complementary metal-oxide-semiconductor amplifiers

AU - Chiu, Chia Sung

AU - Chang, Ching Chun

AU - Ku, Chia Lin

AU - Peng, Kang Ming

AU - Jeng, Erik S.

AU - Chen, Wen Lin

AU - Huang, Guo Wei

AU - Wu, Lin-Kun

PY - 2009/4/1

Y1 - 2009/4/1

N2 - A surface acoustic wave (SAW) vapor sensor is presented in this work. A SAW delay line oscillator on quartz substrate with the high gain complementary metal-oxide-semiconductor (CMOS) amplifier using a two-poly-two-metal (2P2M) 0.35 μm process was designed. The gain of the CMOS amplifier and its total power consumption are 20 dB and 70mW, respectively. The achieved phase noise of this SAW oscillator is -150 dBc/Hz at 100 kHz offset. The sensing is successfully demonstrated by a thin poly(epichlorohydrin) (PECH) polymer film on a SAW oscillator with alcohol vapor. This two-in-one sensor unit includes the SAW device and the CMOS amplifier provides designers with comprehensive model for using these components for sensor circuit fabrication. Furthermore it will be promising for future chemical and biological sensing applications.

AB - A surface acoustic wave (SAW) vapor sensor is presented in this work. A SAW delay line oscillator on quartz substrate with the high gain complementary metal-oxide-semiconductor (CMOS) amplifier using a two-poly-two-metal (2P2M) 0.35 μm process was designed. The gain of the CMOS amplifier and its total power consumption are 20 dB and 70mW, respectively. The achieved phase noise of this SAW oscillator is -150 dBc/Hz at 100 kHz offset. The sensing is successfully demonstrated by a thin poly(epichlorohydrin) (PECH) polymer film on a SAW oscillator with alcohol vapor. This two-in-one sensor unit includes the SAW device and the CMOS amplifier provides designers with comprehensive model for using these components for sensor circuit fabrication. Furthermore it will be promising for future chemical and biological sensing applications.

UR - http://www.scopus.com/inward/record.url?scp=77952529742&partnerID=8YFLogxK

U2 - 10.1143/JJAP.48.04C182

DO - 10.1143/JJAP.48.04C182

M3 - Article

AN - SCOPUS:77952529742

VL - 48

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 4 PART 2

M1 - 04C182

ER -