Implementation of RF power MOS in 0.18μm CMOS technology for single chip solution

Heng Ming Hsu*, Chih Wei Chen, Jiong Guang Su, Ta Hsun Yeh, Jason Chih Hsien Lin, Jack Yuan Chen Sun, Chun Hsiung Chen

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

This paper presents a complete portfolio of silicon integrated RF power MOS using 0.18μm CMOS technology in the first time. The proposed structure of power MOS promises high breakdown voltage, and presents excellent RF characteristics. To guarantee the production level, a complete qualification testing is also included.

Original languageEnglish
Pages (from-to)1027-1030
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume2
DOIs
StatePublished - 2 Jun 2002
EventIEEE MSS-S International Microwave Symposium Digest - Seattle, WA, United States
Duration: 2 Jun 20027 Jun 2002

Fingerprint Dive into the research topics of 'Implementation of RF power MOS in 0.18μm CMOS technology for single chip solution'. Together they form a unique fingerprint.

  • Cite this