Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor

Chun-Hu Cheng, Chia Chi Fan, Chun Yuan Tu, Hsiao-Hsuan Hsu, Chun-Yen Chang

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


For the first time, we successfully demonstrated the dopant-free HfO2 negative capacitance (NC) transistor featuring a low gate-overdrive voltage and a nearly hysteresis-free sub-40 mV/dec swing. These excellent performances can be ascribed to the reduction of the monoclinic phase suppressed with the thickness scaling and gate stress engineering favorably rearranging oxygen vacancies to boost orthorhombic phase transition. The highly scalable and dopant-free NC transistor shows the potential for the application of advanced CMOS technology.
Original languageEnglish
Pages (from-to)825-828
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number1
StatePublished - Jan 2019


  • Dopant free; ferroelectric; hafnium oxide; negative capacitance (NC) transistor; orthorhombic

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