Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor

Chun-Hu Cheng; Chia Chi Fan; Chun Yuan Tu; Hsiao-Hsuan Hsu; Chun-Yen Chang

doi:10.1109/TED.2018.2881099

Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor

Chun-Hu Cheng, Chia Chi Fan, Chun Yuan Tu, Hsiao-Hsuan Hsu, Chun-Yen Chang

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

For the first time, we successfully demonstrated the dopant-free HfO2 negative capacitance (NC) transistor featuring a low gate-overdrive voltage and a nearly hysteresis-free sub-40 mV/dec swing. These excellent performances can be ascribed to the reduction of the monoclinic phase suppressed with the thickness scaling and gate stress engineering favorably rearranging oxygen vacancies to boost orthorhombic phase transition. The highly scalable and dopant-free NC transistor shows the potential for the application of advanced CMOS technology.

Original language	English
Pages (from-to)	825-828
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	1
DOIs	https://doi.org/10.1109/TED.2018.2881099
State	Published - Jan 2019

Keywords

Dopant free; ferroelectric; hafnium oxide; negative capacitance (NC) transistor; orthorhombic
FERROELECTRICITY

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title = "Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor",

abstract = "For the first time, we successfully demonstrated the dopant-free HfO2 negative capacitance (NC) transistor featuring a low gate-overdrive voltage and a nearly hysteresis-free sub-40 mV/dec swing. These excellent performances can be ascribed to the reduction of the monoclinic phase suppressed with the thickness scaling and gate stress engineering favorably rearranging oxygen vacancies to boost orthorhombic phase transition. The highly scalable and dopant-free NC transistor shows the potential for the application of advanced CMOS technology.",

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author = "Chun-Hu Cheng and Fan, {Chia Chi} and Tu, {Chun Yuan} and Hsiao-Hsuan Hsu and Chun-Yen Chang",

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AU - Fan, Chia Chi

AU - Tu, Chun Yuan

AU - Hsu, Hsiao-Hsuan

AU - Chang, Chun-Yen

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AB - For the first time, we successfully demonstrated the dopant-free HfO2 negative capacitance (NC) transistor featuring a low gate-overdrive voltage and a nearly hysteresis-free sub-40 mV/dec swing. These excellent performances can be ascribed to the reduction of the monoclinic phase suppressed with the thickness scaling and gate stress engineering favorably rearranging oxygen vacancies to boost orthorhombic phase transition. The highly scalable and dopant-free NC transistor shows the potential for the application of advanced CMOS technology.

KW - Dopant free; ferroelectric; hafnium oxide; negative capacitance (NC) transistor; orthorhombic

KW - FERROELECTRICITY

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DO - 10.1109/TED.2018.2881099

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JO - Ieee Transactions On Electron Devices

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