IMPEDIMENT OF THE MAJORITY CARRIER CURRENT BY GRAIN BOUNDARY POTENTIAL IN AL-POLY-SI SCHOTTKY BARRIER SOLAR CELLS.

E. S. Yang*, E. Poon, C. M. Wu, H. C. Card, Wei Hwang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

A theoretical analysis is made to explain the nonexponential current-voltage characteristics observed in Al-Poly-Si (Wacker) Schottky-barrier solar cells fabricated in our laboratory. In this model, the authors consider an effective grain boundary in parallel with the Schottky junction. Comparison between experimental data and numerical calculation indicates that the grain boundary may be represented by a fixed interface charge, a uniformly distributed interface state density and a neutral level E//o. Diodes fabricated in regions with high-angle grain boundaries behave in a manner which conforms closely with the proposed model.

Original languageEnglish
Pages (from-to)209-211
Number of pages3
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Jan 1980
EventTech Dig Int Electron Devices Meet - Washington, DC, USA
Duration: 8 Dec 198010 Dec 1980

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