IMPEDIMENT OF THE MAJORITY CARRIER CURRENT BY GRAIN BOUNDARY POTENTIAL IN AL-POLY-SI SCHOTTKY BARRIER SOLAR CELLS.

E. S. Yang; E. Poon; C. M. Wu; H. C. Card; Wei Hwang

doi:10.1109/IEDM.1980.189795

IMPEDIMENT OF THE MAJORITY CARRIER CURRENT BY GRAIN BOUNDARY POTENTIAL IN AL-POLY-SI SCHOTTKY BARRIER SOLAR CELLS.

E. S. Yang^*, E. Poon, C. M. Wu, H. C. Card, Wei Hwang

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

A theoretical analysis is made to explain the nonexponential current-voltage characteristics observed in Al-Poly-Si (Wacker) Schottky-barrier solar cells fabricated in our laboratory. In this model, the authors consider an effective grain boundary in parallel with the Schottky junction. Comparison between experimental data and numerical calculation indicates that the grain boundary may be represented by a fixed interface charge, a uniformly distributed interface state density and a neutral level E//o. Diodes fabricated in regions with high-angle grain boundaries behave in a manner which conforms closely with the proposed model.

Original language	English
Pages (from-to)	209-211
Number of pages	3
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1980.189795
State	Published - 1 Jan 1980
Event	Tech Dig Int Electron Devices Meet - Washington, DC, USA Duration: 8 Dec 1980 → 10 Dec 1980

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@article{7a1dd039fecf40c89386ee849b426704,

title = "IMPEDIMENT OF THE MAJORITY CARRIER CURRENT BY GRAIN BOUNDARY POTENTIAL IN AL-POLY-SI SCHOTTKY BARRIER SOLAR CELLS.",

abstract = "A theoretical analysis is made to explain the nonexponential current-voltage characteristics observed in Al-Poly-Si (Wacker) Schottky-barrier solar cells fabricated in our laboratory. In this model, the authors consider an effective grain boundary in parallel with the Schottky junction. Comparison between experimental data and numerical calculation indicates that the grain boundary may be represented by a fixed interface charge, a uniformly distributed interface state density and a neutral level E//o. Diodes fabricated in regions with high-angle grain boundaries behave in a manner which conforms closely with the proposed model.",

author = "Yang, {E. S.} and E. Poon and Wu, {C. M.} and Card, {H. C.} and Wei Hwang",

year = "1980",

month = jan,

day = "1",

doi = "10.1109/IEDM.1980.189795",

language = "English",

pages = "209--211",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 08-12-1980 Through 10-12-1980",

}

TY - JOUR

T1 - IMPEDIMENT OF THE MAJORITY CARRIER CURRENT BY GRAIN BOUNDARY POTENTIAL IN AL-POLY-SI SCHOTTKY BARRIER SOLAR CELLS.

AU - Yang, E. S.

AU - Poon, E.

AU - Wu, C. M.

AU - Card, H. C.

AU - Hwang, Wei

PY - 1980/1/1

Y1 - 1980/1/1

N2 - A theoretical analysis is made to explain the nonexponential current-voltage characteristics observed in Al-Poly-Si (Wacker) Schottky-barrier solar cells fabricated in our laboratory. In this model, the authors consider an effective grain boundary in parallel with the Schottky junction. Comparison between experimental data and numerical calculation indicates that the grain boundary may be represented by a fixed interface charge, a uniformly distributed interface state density and a neutral level E//o. Diodes fabricated in regions with high-angle grain boundaries behave in a manner which conforms closely with the proposed model.

AB - A theoretical analysis is made to explain the nonexponential current-voltage characteristics observed in Al-Poly-Si (Wacker) Schottky-barrier solar cells fabricated in our laboratory. In this model, the authors consider an effective grain boundary in parallel with the Schottky junction. Comparison between experimental data and numerical calculation indicates that the grain boundary may be represented by a fixed interface charge, a uniformly distributed interface state density and a neutral level E//o. Diodes fabricated in regions with high-angle grain boundaries behave in a manner which conforms closely with the proposed model.

UR - http://www.scopus.com/inward/record.url?scp=0019290451&partnerID=8YFLogxK

U2 - 10.1109/IEDM.1980.189795

DO - 10.1109/IEDM.1980.189795

M3 - Conference article

AN - SCOPUS:0019290451

SP - 209

EP - 211

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

Y2 - 8 December 1980 through 10 December 1980

ER -