A theoretical analysis is made to explain the nonexponential current-voltage characteristics observed in Al-Poly-Si (Wacker) Schottky-barrier solar cells fabricated in our laboratory. In this model, the authors consider an effective grain boundary in parallel with the Schottky junction. Comparison between experimental data and numerical calculation indicates that the grain boundary may be represented by a fixed interface charge, a uniformly distributed interface state density and a neutral level E//o. Diodes fabricated in regions with high-angle grain boundaries behave in a manner which conforms closely with the proposed model.
|Number of pages||3|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Jan 1980|
|Event||Tech Dig Int Electron Devices Meet - Washington, DC, USA|
Duration: 8 Dec 1980 → 10 Dec 1980