Impacts of the underlying insulating layers on the MILC growth length and electrical characteristics

Chia Chun Liao*, Min Chen Lin, Shao Xuan Liu, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

This letter investigates the impacts of proximity layers on metal-induced lateral crystallization (MILC). The underlying insulating layers not only affect the MILC growth length but also influence the electrical characteristics. Based on the comparison among the underlying insulating layers, SiN is unsuitable to be an underlying insulating layer because of concerns regarding the crystallization condition. This letter proposes three reasonable mechanisms, including the gettering of Ni, intrinsic stress, and the involvement of hydrogen to enhance the understanding of the impacts of proximity layers.

Original languageEnglish
Article number6101550
Pages (from-to)239-241
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number2
DOIs
StatePublished - 1 Feb 2012

Keywords

  • Metal-induced lateral crystallization (MILC)
  • strain
  • thin-film transistors (TFTs)

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