Impacts of sin deposition conditions on the flicker noise characteristics of strained N-channel metal-oxide-semiconductor field-effect transistors

Ching Sen Lu*, Tiao Yuan Huang, Horng-Chih Lin

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Impacts of SiN deposition conditions on the flicker noise characteristics of strained n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) were investigated in this work. Increasing N2 flow rate in the SiN deposition process increases the tensile stress of SiN film, and therefore improves NMOSFETs' performance. However, the accompanying decrease of hydrogen content reduces the passivation of defects and dangling bonds near the interface, and is believed to be the main culprit for the degraded flicker noise characteristics.

Original languageEnglish
Pages (from-to)269-276
Number of pages8
JournalInternational Journal of Electrical Engineering
Volume16
Issue number4
StatePublished - 1 Aug 2009

Keywords

  • Flicker noise
  • Gas flow rate
  • SiN
  • Tensile stress

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