Impacts of SiN deposition conditions on the flicker noise characteristics of strained n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) were investigated in this work. Increasing N2 flow rate in the SiN deposition process increases the tensile stress of SiN film, and therefore improves NMOSFETs' performance. However, the accompanying decrease of hydrogen content reduces the passivation of defects and dangling bonds near the interface, and is believed to be the main culprit for the degraded flicker noise characteristics.
|Number of pages||8|
|Journal||International Journal of Electrical Engineering|
|State||Published - 1 Aug 2009|
- Flicker noise
- Gas flow rate
- Tensile stress