Impacts of precursor flow rate and temperature of PEC VD-SiN capping films on strained-channel NMOSFETs

Ching Sen Lu, Horng-Chih Lin, Yao Jen Lee, Tiao Yuan Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2007 International Semiconductor Device Research Symposium, ISDRS
DOIs
StatePublished - 1 Dec 2007
Event2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States
Duration: 12 Dec 200714 Dec 2007

Publication series

Name2007 International Semiconductor Device Research Symposium, ISDRS

Conference

Conference2007 International Semiconductor Device Research Symposium, ISDRS
CountryUnited States
CityCollege Park, MD
Period12/12/0714/12/07

Cite this

Lu, C. S., Lin, H-C., Lee, Y. J., & Huang, T. Y. (2007). Impacts of precursor flow rate and temperature of PEC VD-SiN capping films on strained-channel NMOSFETs. In 2007 International Semiconductor Device Research Symposium, ISDRS [4422400] (2007 International Semiconductor Device Research Symposium, ISDRS). https://doi.org/10.1109/ISDRS.2007.4422400