Impacts of nitric acid oxidation on low-temperature polycrystalline silicon TFTs with high-κ gate dielectric

Tsung Yu Yang*, Ming Wen Ma, Kuo Hsing Kao, Chun Jung Su, Tien-Sheng Chao, Tan Fu Lei

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with HfO2 gate dielectric and nitric acid oxidation pre-treatment is investigated. Significant improvement on on/off current ratio and field effect mobility is observed due to the nitric acid oxidation pre-treatment. An excellent on/off current ratio and subthreshold swing, as well as low threshold voltage and Ioff can be achieved without any other hydrogen passivation treatments. These improved performances can be attributed to both the high gate capacitance density using high-κ gate dielectric and the good interface quality by nitric acid oxidation of poly-silicon.

Original languageEnglish
Title of host publicationAD'07 - Proceedings of Asia Display 2007
Pages519-522
Number of pages4
StatePublished - 1 Dec 2007
EventAsia Display 2007, AD'07 - Shanghai, China
Duration: 12 Mar 200716 Mar 2007

Publication series

NameAD'07 - Proceedings of Asia Display 2007
Volume1

Conference

ConferenceAsia Display 2007, AD'07
CountryChina
CityShanghai
Period12/03/0716/03/07

Keywords

  • HfO
  • High-κ gate dielectric
  • Nitric acid oxidation
  • Thin-film transistors (TFTs)

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  • Cite this

    Yang, T. Y., Ma, M. W., Kao, K. H., Su, C. J., Chao, T-S., & Lei, T. F. (2007). Impacts of nitric acid oxidation on low-temperature polycrystalline silicon TFTs with high-κ gate dielectric. In AD'07 - Proceedings of Asia Display 2007 (pp. 519-522). (AD'07 - Proceedings of Asia Display 2007; Vol. 1).