Impacts of multiple strain-gate engineering on a zero-temperature- coefficient point

Tien Shun Chang*, Tsung Yi Lu, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

The impacts of zero-temperature-coefficient (ZTC) points of various strained devices is presented in this paper. The current and mobility are reduced at high temperature by phonon scattering. The degree of mobility reduction becomes severe on devices with multiple strain-gate engineering. The reduction of mobility becomes severe as a result of impurity scattering, which results from gate implantation impurities. The ZTC point is decreased by multiple strain-gate engineering due to the decreased Vth.

Original languageEnglish
Article number6484132
Pages (from-to)481-486
Number of pages6
JournalIEEE Electron Device Letters
Volume34
Issue number4
DOIs
StatePublished - 5 Apr 2013

Keywords

  • Mobility
  • nMOSFETs
  • strain
  • temperature
  • zero-temperature-coefficient (ZTC) point

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