TY - JOUR
T1 - Impacts of multiple-gated configuration on the characteristics of poly-si nanowire SONOS devices
AU - Hsu, Hsing Hui
AU - Lin, Horng-Chih
AU - Luo, Cheng Wei
AU - Su, Chun Jung
AU - Huang, Tiao Yuan
PY - 2011/3/1
Y1 - 2011/3/1
N2 - In this paper, we have proposed a simple and novel way to fabricate poly-Si nanowire (NW)-silicon-oxide-nitride-oxide-silicon (SONOS) devices with various gate configurations. Three types of devices having various gate configurations, such as side gated, Ω-shaped gated ΩG, and gate-all-around (GAA), were successfully fabricated and characterized. The experimental results show that, owing to the superior gate controllability over NW channels, much improved transfer characteristics are achieved with the GAA devices, as compared with the other types of devices. Moreover, GAA devices also exhibit the best memory characteristics among all splits, including the fastest programming/erasing efficiency, largest memory window, and best endurance/retention characteristics, highlighting the potential of such scheme for future SONOS applications.
AB - In this paper, we have proposed a simple and novel way to fabricate poly-Si nanowire (NW)-silicon-oxide-nitride-oxide-silicon (SONOS) devices with various gate configurations. Three types of devices having various gate configurations, such as side gated, Ω-shaped gated ΩG, and gate-all-around (GAA), were successfully fabricated and characterized. The experimental results show that, owing to the superior gate controllability over NW channels, much improved transfer characteristics are achieved with the GAA devices, as compared with the other types of devices. Moreover, GAA devices also exhibit the best memory characteristics among all splits, including the fastest programming/erasing efficiency, largest memory window, and best endurance/retention characteristics, highlighting the potential of such scheme for future SONOS applications.
KW - Field-effect transistor (FET)
KW - multiple gate (MG)
KW - nanowire (NW)
KW - poly-Si
KW - silicon-oxide-nitride-oxide-silicon (SONOS)
UR - http://www.scopus.com/inward/record.url?scp=79952041184&partnerID=8YFLogxK
U2 - 10.1109/TED.2010.2098033
DO - 10.1109/TED.2010.2098033
M3 - Article
AN - SCOPUS:79952041184
VL - 58
SP - 641
EP - 649
JO - Ieee Transactions On Electron Devices
JF - Ieee Transactions On Electron Devices
SN - 0018-9383
IS - 3
M1 - 5699915
ER -