Impacts of low-pressure chemical vapor deposition-SiN capping layer and lateral distribution of interface traps on hot-carrier stress of n-channel metal-oxide-semiconductor field-effect-transistors

Ching Sen Lu*, Horng-Chih Lin, Jian Ming Huang, Chia Yu Lu, Yao Jen Lee, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The characteristics of n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with a SiN capping layer were investigated in this study. Although the incorporation of the SiN capping layer markedly enhanced the carrier mobility and thus the drive current of the fabricated devices, the resistance to hot-carrier degradation was sacrificed, owing to the high content of hydrogen in the SiN layer that might diffuse to the channel region during the process. Even if the SiN layer was removed and the channel strain was released later, the hot-carrier degradation was severer than that in devices without SiN capping. Finally, the lateral distribution of generated interface states due to hot-carrier stress was also investigated in this study.

Original languageEnglish
Pages (from-to)2027-2031
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number4 B
DOIs
StatePublished - 24 Apr 2007

Keywords

  • Charge pumping
  • Hot-carrier stress (HCS)
  • Lateral distribution of interface state
  • SiN capping
  • Tensile strain

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