Impacts of intrinsic device variations on the stability of FinFET subthreshold SRAMs

Yin Nien Chen*, Chien Yu Hsieh, Ming Long Fan, Vita Pi Ho Hu, Pin Su, Ching Te Chuang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

In this work, we investigate the impacts of intrinsic device variations on FinFET subthreshold SRAMs, including the conventional tied-gate 6T SRAM, tied-gate 10T Schmitt Trigger based SRAMs, and recently proposed independent-gate controlled 8T Schmitt Trigger based SRAMs. The impacts of intrinsic random device variations, including Fin Line-Edge Roughness (LER) and Work Function Variation (WFV), on the device threshold voltage V th , Subthreshold Swing (S.S.) and stability of FinFET SRAMs operating in subthreshold region are assessed using 3D atomistic mixed-mode Monte-Carlo simulations. The results indicate that Fin LER is the dominant factor limiting the stability of FinFET subthreshold SRAMs, since Fin LER degrades both Vth fluctuation and S.S., while WFV mainly affects only Vth fluctuation. The independent-gate controlled Schmitt Trigger SRAMs are shown to offer adequate stability for the intended subthreshold applications even considering intrinsic device variations.

Original languageEnglish
Title of host publication2011 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2011
DOIs
StatePublished - 24 Jun 2011
Event2011 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2011 - Kaohsiung, Taiwan
Duration: 2 May 20114 May 2011

Publication series

Name2011 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2011

Conference

Conference2011 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2011
CountryTaiwan
CityKaohsiung
Period2/05/114/05/11

Keywords

  • Line-Edge Roughness (LER)
  • Schmitt Trigger
  • Subthreshold SRAM
  • Work Function Variation (WFV)

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