Impacts of HF etching on ultra-thin core gate oxide integrity in dual gate oxide CMOS technology

Da Yuan Lee, Horng-Chih Lin, Chia Lin Chen, Tiao Yuan Huang, Ta-Hui Wang, Tze Liang Lee, Shih Chang Chen, Mong Song Liang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

In this paper, we investigate the effects of HF etching on the integrity of ultra-thin oxides in dual gate oxide (DGO) CMOS technologies. We found that both the HF concentration in the etching solution and the over etching (OE) time are important parameters that greatly affect the device performance and reliability. Our results indicate that, with a proper over etching period, using a concentrated HF solution results in better ultra-thin gate oxides in terms of reduced defect density, improved device performance and reliability, compared to using diluted HF solution. It is also found for the first time that negative-bias-temperature instability (NBTI) immunity for PMOSFETs is improved by using concentrated HF solutions.

Original languageEnglish
Title of host publication2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003
EditorsKoji Eriguchi, S. Krishnan, Terence Hook
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages77-80
Number of pages4
ISBN (Electronic)0780377478
DOIs
StatePublished - 1 Jan 2003
Event2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003 - Corbeil-Essonnes, France
Duration: 24 Apr 200325 Apr 2003

Publication series

NameInternational Symposium on Plasma Process-Induced Damage, P2ID, Proceedings
Volume2003-January

Conference

Conference2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003
CountryFrance
CityCorbeil-Essonnes
Period24/04/0325/04/03

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