Impacts of gate structure on dynamic threshold SOI nMOSFETs

Wen Cheng Lo*, Sun Jay Chang, Chun Yen Chang, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

The effects of different substrate-contact structures (T-gate and H-gate) dynamic threshold voltage silicon-on-insulator (SOI) nMOSFETs (DTMOS) have been investigated. It is found that H-gate structure devices have higher driving current than T-gate under DTMOS-mode operation. This is because H-gate SOI devices have larger body effect factor (γ), inducing a lager reduction of threshold voltage. Besides, it is found that drain-induced-barrier-lowering (DIBL) is dramatically reduced for both T-gate and H-gate structure devices when devices are operated under DTMOS-mode.

Original languageEnglish
Pages (from-to)497-499
Number of pages3
JournalIEEE Electron Device Letters
Volume23
Issue number8
DOIs
StatePublished - 1 Aug 2002

Keywords

  • Dynamic threshold MOS (DTMOS)
  • H-gate
  • Silicon-on-insulator (SOI)
  • T-gate

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