Impacts of gap thickness scaling on thin-film transistors with suspended nanowire channels

Chia Hao Kuo*, Chia Wei Hsu, Hsing Hui Hsu, Horng-Chih Lin, Tiao Yuan Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

For the past years, MEMS-based devices such as Suspended Gate Metal-Oxide-Semiconductor Field-Effect Transistor (sg-mosfet) [1] and air-gap poly Si Thin-Film Transistors (TFTs) [2] have received considerable attention because of their abrupt switching characteristics which is attractive for solving the non-scalable subthreshold swing (ss) of traditional MOSFETs. Although some simulation results showed that the pull-in voltage, which can be regarded as the threshold voltage of mosfet, could be reduced directly by shrinking the air-gap thickness [35], however, difficulty in etching arises because of extremely high aspect ratio of the air gap structure as the gap thickness is scaled down.

Original languageEnglish
Title of host publicationProceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages24-25
Number of pages2
DOIs
StatePublished - 11 Jul 2011
Event2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan
Duration: 25 Apr 201127 Apr 2011

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
CountryTaiwan
CityHsinchu
Period25/04/1127/04/11

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