Abstract
In this work, it is demonstrated that the negative capacitance effect of ferroelectric Hf1-xZrxO2 transistor is highly correlated with Zr doping concentration. A steep subthreshold swing of 40mV/decade, a low off-state leakage current of 190fAm(-1), and a large on/off current ratio of >10(7) can be simultaneously achieved in optimized negative capacitance Hf1-xZrxO2 transistor. Besides, the Zr diffusion issue and non-ferroelectric phases significantly affect the multi-domain switching of polycrystalline Hf1-xZrxO2. Therefore, an appropriate amount of Zr substitution is more favorable for both boosting ferroelectric and implementing the negative capacitance switch.
Original language | English |
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Article number | 1800573 |
Journal | Physica Status Solidi - Rapid Research Letters |
Volume | 13 |
Issue number | 5 |
DOIs | |
State | Published - May 2019 |
Keywords
- ferroelectric; hafnium zirconium oxide; negative capacitance; transistors
- FERROELECTRICITY