Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors

Chun-Hu Cheng; Ming Huei Lin; Hsin Yu Chen; Chia Chi Fan; Chien Liu; Hsiao-Hsuan Hsu; Chun-Yen Chang

doi:10.1002/pssr.201800573

Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors

Chun-Hu Cheng, Ming Huei Lin, Hsin Yu Chen, Chia Chi Fan, Chien Liu, Hsiao-Hsuan Hsu, Chun-Yen Chang

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

In this work, it is demonstrated that the negative capacitance effect of ferroelectric Hf1-xZrxO2 transistor is highly correlated with Zr doping concentration. A steep subthreshold swing of 40mV/decade, a low off-state leakage current of 190fAm(-1), and a large on/off current ratio of >10(7) can be simultaneously achieved in optimized negative capacitance Hf1-xZrxO2 transistor. Besides, the Zr diffusion issue and non-ferroelectric phases significantly affect the multi-domain switching of polycrystalline Hf1-xZrxO2. Therefore, an appropriate amount of Zr substitution is more favorable for both boosting ferroelectric and implementing the negative capacitance switch.

Original language	English
Article number	1800573
Journal	Physica Status Solidi - Rapid Research Letters
Volume	13
Issue number	5
DOIs	https://doi.org/10.1002/pssr.201800573
State	Published - May 2019

Keywords

ferroelectric; hafnium zirconium oxide; negative capacitance; transistors
FERROELECTRICITY

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@article{2869a65d8e244eebb0c6c68052dfdfcd,

title = "Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors",

abstract = "In this work, it is demonstrated that the negative capacitance effect of ferroelectric Hf1-xZrxO2 transistor is highly correlated with Zr doping concentration. A steep subthreshold swing of 40mV/decade, a low off-state leakage current of 190fAm(-1), and a large on/off current ratio of >10(7) can be simultaneously achieved in optimized negative capacitance Hf1-xZrxO2 transistor. Besides, the Zr diffusion issue and non-ferroelectric phases significantly affect the multi-domain switching of polycrystalline Hf1-xZrxO2. Therefore, an appropriate amount of Zr substitution is more favorable for both boosting ferroelectric and implementing the negative capacitance switch.",

keywords = "ferroelectric; hafnium zirconium oxide; negative capacitance; transistors, FERROELECTRICITY",

author = "Chun-Hu Cheng and Lin, {Ming Huei} and Chen, {Hsin Yu} and Fan, {Chia Chi} and Chien Liu and Hsiao-Hsuan Hsu and Chun-Yen Chang",

year = "2019",

month = may,

doi = "10.1002/pssr.201800573",

language = "English",

volume = "13",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley-VCH Verlag",

number = "5",

}

Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors. / Cheng, Chun-Hu; Lin, Ming Huei; Chen, Hsin Yu; Fan, Chia Chi; Liu, Chien; Hsu, Hsiao-Hsuan; Chang, Chun-Yen.

In: Physica Status Solidi - Rapid Research Letters, Vol. 13, No. 5, 1800573, 05.2019.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors

AU - Cheng, Chun-Hu

AU - Lin, Ming Huei

AU - Chen, Hsin Yu

AU - Fan, Chia Chi

AU - Liu, Chien

AU - Hsu, Hsiao-Hsuan

AU - Chang, Chun-Yen

PY - 2019/5

Y1 - 2019/5

N2 - In this work, it is demonstrated that the negative capacitance effect of ferroelectric Hf1-xZrxO2 transistor is highly correlated with Zr doping concentration. A steep subthreshold swing of 40mV/decade, a low off-state leakage current of 190fAm(-1), and a large on/off current ratio of >10(7) can be simultaneously achieved in optimized negative capacitance Hf1-xZrxO2 transistor. Besides, the Zr diffusion issue and non-ferroelectric phases significantly affect the multi-domain switching of polycrystalline Hf1-xZrxO2. Therefore, an appropriate amount of Zr substitution is more favorable for both boosting ferroelectric and implementing the negative capacitance switch.

AB - In this work, it is demonstrated that the negative capacitance effect of ferroelectric Hf1-xZrxO2 transistor is highly correlated with Zr doping concentration. A steep subthreshold swing of 40mV/decade, a low off-state leakage current of 190fAm(-1), and a large on/off current ratio of >10(7) can be simultaneously achieved in optimized negative capacitance Hf1-xZrxO2 transistor. Besides, the Zr diffusion issue and non-ferroelectric phases significantly affect the multi-domain switching of polycrystalline Hf1-xZrxO2. Therefore, an appropriate amount of Zr substitution is more favorable for both boosting ferroelectric and implementing the negative capacitance switch.

KW - ferroelectric; hafnium zirconium oxide; negative capacitance; transistors

KW - FERROELECTRICITY

U2 - 10.1002/pssr.201800573

DO - 10.1002/pssr.201800573

M3 - Article

VL - 13

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

SN - 1862-6254

IS - 5

M1 - 1800573

ER -