Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors

Chun-Hu Cheng, Ming Huei Lin, Hsin Yu Chen, Chia Chi Fan, Chien Liu, Hsiao-Hsuan Hsu, Chun-Yen Chang

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

In this work, it is demonstrated that the negative capacitance effect of ferroelectric Hf1-xZrxO2 transistor is highly correlated with Zr doping concentration. A steep subthreshold swing of 40mV/decade, a low off-state leakage current of 190fAm(-1), and a large on/off current ratio of >10(7) can be simultaneously achieved in optimized negative capacitance Hf1-xZrxO2 transistor. Besides, the Zr diffusion issue and non-ferroelectric phases significantly affect the multi-domain switching of polycrystalline Hf1-xZrxO2. Therefore, an appropriate amount of Zr substitution is more favorable for both boosting ferroelectric and implementing the negative capacitance switch.
Original languageEnglish
Article number1800573
JournalPhysica Status Solidi - Rapid Research Letters
Volume13
Issue number5
DOIs
StatePublished - May 2019

Keywords

  • ferroelectric; hafnium zirconium oxide; negative capacitance; transistors
  • FERROELECTRICITY

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