The impact of electron velocity overshoot on MOSFET scaling is investigated. The calibration of a 2-D device simulator MEDICI to experimental data is first described. Then, NMOS scaling trends are studied using the calibrated simulator. Inversion layer quantization effect as well as polysilicon gate depletion are taken into account and shown to have a significant impact on NMOS current drive. The results show that velocity overshoot will allow the continued enhancement of the NMOS current drive, despite the scaling of power supply voltages.
|Number of pages||2|
|State||Published - 1 Dec 1998|
|Event||Proceedings of the 1998 56th Annual Device Research Conference - Charlottesville, VA, USA|
Duration: 22 Jun 1998 → 24 Jun 1998
|Conference||Proceedings of the 1998 56th Annual Device Research Conference|
|City||Charlottesville, VA, USA|
|Period||22/06/98 → 24/06/98|