Impact of velocity overshoot, polysilicon depletion, and inversion layer quantization on NMOSFET scaling

Michael Orshansky*, Dennis Sinitsky, Paul Scrobohaci, Jeffrey Bokor, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

The impact of electron velocity overshoot on MOSFET scaling is investigated. The calibration of a 2-D device simulator MEDICI to experimental data is first described. Then, NMOS scaling trends are studied using the calibrated simulator. Inversion layer quantization effect as well as polysilicon gate depletion are taken into account and shown to have a significant impact on NMOS current drive. The results show that velocity overshoot will allow the continued enhancement of the NMOS current drive, despite the scaling of power supply voltages.

Original languageEnglish
Pages18-19
Number of pages2
DOIs
StatePublished - 1 Dec 1998
EventProceedings of the 1998 56th Annual Device Research Conference - Charlottesville, VA, USA
Duration: 22 Jun 199824 Jun 1998

Conference

ConferenceProceedings of the 1998 56th Annual Device Research Conference
CityCharlottesville, VA, USA
Period22/06/9824/06/98

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