Impact of uniaxial strain on low-frequency noise in nanoscale PMOSFETs

Jack J.Y. Kuo*, William P.N. Chen, Pin Su

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

This letter investigates the low-frequency noise characteristics and reports a new mechanism for uniaxial strained PMOSFETs. Through a comparison of the input-referred noise and the trap density of the gate dielectric/semiconductor interface between co-processed strained and unstrained devices, it is found that the tunneling attenuation length for channel carriers penetrating into the gate dielectric is reduced by uniaxial strain. The reduced tunneling attenuation length may result in smaller input-referred noise, which represents an intrinsic advantage of low-frequency noise performance stemming from process-induced strain.

Original languageEnglish
Pages (from-to)672-674
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number6
DOIs
StatePublished - 18 May 2009

Keywords

  • Interface state
  • Low-frequency noise
  • Process-induced strain
  • Trap density
  • Tunneling attenuation length
  • Uniaxial strained PMOSFET

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