Impact of uniaxial strain on channel backscattering characteristics and drain current variation for nanoscale PMOSFETs

Wei Lee*, Jack J Y Kuo, Willian P N Chen, Pin Su, Min Chie Jeng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Scopus citations

Abstract

Using an improved temperature-dependent method, this paper clarifies that channel backscattering of nanoscale PMOSFETs can be reduced by the uniaxially compressive strain. For the first time, the electrostatic potential of the source-channel junction barrier has been experimentally characterized with strain and gate voltage dependence. We further demonstrate that the strain technology can improve the drain current variation as well as the mismatching properties through the enhanced ballistic efficiency. Moreover, the improvement shows gate length and drain voltage dependence.

Original languageEnglish
Title of host publication2009 Symposium on VLSI Technology, VLSIT 2009
Pages112-113
Number of pages2
StatePublished - 16 Nov 2009
Event2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan
Duration: 16 Jun 200918 Jun 2009

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Conference

Conference2009 Symposium on VLSI Technology, VLSIT 2009
CountryJapan
CityKyoto
Period16/06/0918/06/09

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    Lee, W., Kuo, J. J. Y., Chen, W. P. N., Su, P., & Jeng, M. C. (2009). Impact of uniaxial strain on channel backscattering characteristics and drain current variation for nanoscale PMOSFETs. In 2009 Symposium on VLSI Technology, VLSIT 2009 (pp. 112-113). [5200653] (Digest of Technical Papers - Symposium on VLSI Technology).