Impact of time dependent dielectric breakdown and stress induced leakage current on the reliability of (Ba,Sr)TiO3 thin film capacitors for Gbit-scale DRAMs

Shintaro Yamamichi*, Akiko Yamamichi, Donggun Park, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

Time dependent dielectric breakdown (TDDB) and stress-induced leakage current (SILC) are investigated for the reliability of (Ba0.5Sr0.5)TiO3 (BST) thin films. TDDB characteristics show a lifetime longer than 10 years at +1 V for BST films with an SiO2 equivalent thickness (teq) of 0.70 nm. The breakdown is strongly affected by leakage current properties, and does not depend on the dielectric constant. SILC is studied at +1 V in time domain after stress charge injection into BST films. 10 year operation for Gbit-scale DRAMs can be guaranteed in spite of the charge loss caused by SILC.

Original languageEnglish
Pages (from-to)261-264
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Volume46
Issue number2
DOIs
StatePublished - 1 Dec 1997
Event1997 International Electron Devices Meeting - Washington, DC, USA
Duration: 7 Dec 199710 Dec 1997

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