Impact of time dependent dielectric breakdown and stress-induced leakage current on the reliability of high dielectric constant (Ba, Sr)TiOs thin-film capacitors for gbit-scale DRAM's

Shintaro Yamamichi; Akiko Yamamichi; Donggun Park; Tsu Jae King; Chen-Ming Hu

doi:10.1109/16.740900

Impact of time dependent dielectric breakdown and stress-induced leakage current on the reliability of high dielectric constant (Ba, Sr)TiOs thin-film capacitors for gbit-scale DRAM's

Shintaro Yamamichi^*, Akiko Yamamichi, Donggun Park, Tsu Jae King, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Time dependent dielectric breakdown (TDDB) and stress-induced leakage current (SILC) are investigated for the reliability of (Ba, Sr)TiO3 (BST) thin films. Both time to breakdown (TBD) versus electric field (E) and TBD versus l/E plots show universal straight lines, independent of the film thickness, and predict lifetimes longer than 10 y at +1 V for 50 nm BST films with an SiU2 equivalent thickness of 0.70 nm. SILC is observed at +1 V after electrical stress of BST films; nevertheless, 10 y reliable operation for Gbit-scale DRAM's is predicted in spite of charge loss by SILC. Lower (Ba + Sr)/Ti ratio is found to be strongly beneficial for low leakage, low SILC, long TBD, and therefore greater long-term reliability. This suggests a worthwhile tradeoff against the dielectric constant, which peaks at a (Ba + Sr)/Ti ratio of 1.05.

Original language	English
Pages (from-to)	342-347
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	46
Issue number	2
DOIs	https://doi.org/10.1109/16.740900
State	Published - 1 Dec 1999

Keywords

(Ba, Sr)TiO
Capacitor
DRAM
High dielectric constant
Reliability
SILC
TDDB

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title = "Impact of time dependent dielectric breakdown and stress-induced leakage current on the reliability of high dielectric constant (Ba, Sr)TiOs thin-film capacitors for gbit-scale DRAM's",

abstract = "Time dependent dielectric breakdown (TDDB) and stress-induced leakage current (SILC) are investigated for the reliability of (Ba, Sr)TiO3 (BST) thin films. Both time to breakdown (TBD) versus electric field (E) and TBD versus l/E plots show universal straight lines, independent of the film thickness, and predict lifetimes longer than 10 y at +1 V for 50 nm BST films with an SiU2 equivalent thickness of 0.70 nm. SILC is observed at +1 V after electrical stress of BST films; nevertheless, 10 y reliable operation for Gbit-scale DRAM's is predicted in spite of charge loss by SILC. Lower (Ba + Sr)/Ti ratio is found to be strongly beneficial for low leakage, low SILC, long TBD, and therefore greater long-term reliability. This suggests a worthwhile tradeoff against the dielectric constant, which peaks at a (Ba + Sr)/Ti ratio of 1.05.",

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Impact of time dependent dielectric breakdown and stress-induced leakage current on the reliability of high dielectric constant (Ba, Sr)TiOs thin-film capacitors for gbit-scale DRAM's. / Yamamichi, Shintaro; Yamamichi, Akiko; Park, Donggun; King, Tsu Jae; Hu, Chen-Ming.

In: IEEE Transactions on Electron Devices, Vol. 46, No. 2, 01.12.1999, p. 342-347.

Research output: Contribution to journal › Article › peer-review

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AU - Yamamichi, Shintaro

AU - Yamamichi, Akiko

AU - Park, Donggun

AU - King, Tsu Jae

AU - Hu, Chen-Ming

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N2 - Time dependent dielectric breakdown (TDDB) and stress-induced leakage current (SILC) are investigated for the reliability of (Ba, Sr)TiO3 (BST) thin films. Both time to breakdown (TBD) versus electric field (E) and TBD versus l/E plots show universal straight lines, independent of the film thickness, and predict lifetimes longer than 10 y at +1 V for 50 nm BST films with an SiU2 equivalent thickness of 0.70 nm. SILC is observed at +1 V after electrical stress of BST films; nevertheless, 10 y reliable operation for Gbit-scale DRAM's is predicted in spite of charge loss by SILC. Lower (Ba + Sr)/Ti ratio is found to be strongly beneficial for low leakage, low SILC, long TBD, and therefore greater long-term reliability. This suggests a worthwhile tradeoff against the dielectric constant, which peaks at a (Ba + Sr)/Ti ratio of 1.05.

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