Impact of time dependent dielectric breakdown and stress-induced leakage current on the reliability of high dielectric constant (Ba, Sr)TiOs thin-film capacitors for gbit-scale DRAM's

Shintaro Yamamichi*, Akiko Yamamichi, Donggun Park, Tsu Jae King, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

Time dependent dielectric breakdown (TDDB) and stress-induced leakage current (SILC) are investigated for the reliability of (Ba, Sr)TiO3 (BST) thin films. Both time to breakdown (TBD) versus electric field (E) and TBD versus l/E plots show universal straight lines, independent of the film thickness, and predict lifetimes longer than 10 y at +1 V for 50 nm BST films with an SiU2 equivalent thickness of 0.70 nm. SILC is observed at +1 V after electrical stress of BST films; nevertheless, 10 y reliable operation for Gbit-scale DRAM's is predicted in spite of charge loss by SILC. Lower (Ba + Sr)/Ti ratio is found to be strongly beneficial for low leakage, low SILC, long TBD, and therefore greater long-term reliability. This suggests a worthwhile tradeoff against the dielectric constant, which peaks at a (Ba + Sr)/Ti ratio of 1.05.

Original languageEnglish
Pages (from-to)342-347
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume46
Issue number2
DOIs
StatePublished - 1 Dec 1999

Keywords

  • (Ba, Sr)TiO
  • Capacitor
  • DRAM
  • High dielectric constant
  • Reliability
  • SILC
  • TDDB

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