Impact of thin La2O3 insertion for HfO2 MOSFET

K. Kakushima*, K. Okamoto, M. Adachi, K. Tachi, S. Sato, T. Kawanago, J. Song, P. Ahmet, N. Sugii, K. Tsutsui, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

The impact of La2O3 insertion for HfO2 gated MOSFET is presented. The origin of a large negative shift in flat band voltage with La2O3 insertion has been carefully extracted to be the dipole presented at La2O3/SiO2 interface. An improvement in effective electron mobility without degrading the interfacial state density has been performed with thin La2O 3 insertion for HfO2 MOSFET.

Original languageEnglish
Title of host publicationECS Transactions - Dielectrics for Nanosystems 3
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
Pages29-37
Number of pages9
Edition2
DOIs
StatePublished - 2008
Event3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting - Phoenix, AZ, United States
Duration: 18 May 200822 May 2008

Publication series

NameECS Transactions
Number2
Volume13
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting
CountryUnited States
CityPhoenix, AZ
Period18/05/0822/05/08

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    Kakushima, K., Okamoto, K., Adachi, M., Tachi, K., Sato, S., Kawanago, T., Song, J., Ahmet, P., Sugii, N., Tsutsui, K., Hattori, T., & Iwai, H. (2008). Impact of thin La2O3 insertion for HfO2 MOSFET. In ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing (2 ed., pp. 29-37). (ECS Transactions; Vol. 13, No. 2). https://doi.org/10.1149/1.2908613