Abstract
The impact of La2O3 insertion for HfO2 gated MOSFET is presented. The origin of a large negative shift in flat band voltage with La2O3 insertion has been carefully extracted to be the dipole presented at La2O3/SiO2 interface. An improvement in effective electron mobility without degrading the interfacial state density has been performed with thin La2O 3 insertion for HfO2 MOSFET.
Original language | English |
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Title of host publication | ECS Transactions - Dielectrics for Nanosystems 3 |
Subtitle of host publication | Materials Science, Processing, Reliability, and Manufacturing |
Pages | 29-37 |
Number of pages | 9 |
Edition | 2 |
DOIs | |
State | Published - 2008 |
Event | 3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting - Phoenix, AZ, United States Duration: 18 May 2008 → 22 May 2008 |
Publication series
Name | ECS Transactions |
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Number | 2 |
Volume | 13 |
ISSN (Print) | 1938-5862 |
ISSN (Electronic) | 1938-6737 |
Conference
Conference | 3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting |
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Country | United States |
City | Phoenix, AZ |
Period | 18/05/08 → 22/05/08 |