Impact of thin La2O3 insertion for HfO2 MOSFET

K. Kakushima; K. Okamoto; M. Adachi; K. Tachi; S. Sato; T. Kawanago; J. Song; P. Ahmet; N. Sugii; K. Tsutsui; T. Hattori; H. Iwai

doi:10.1149/1.2908613

Impact of thin La₂O₃ insertion for HfO₂ MOSFET

K. Kakushima^*, K. Okamoto, M. Adachi, K. Tachi, S. Sato, T. Kawanago, J. Song, P. Ahmet, N. Sugii, K. Tsutsui, T. Hattori, H. Iwai

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

The impact of La₂O₃ insertion for HfO₂ gated MOSFET is presented. The origin of a large negative shift in flat band voltage with La₂O₃ insertion has been carefully extracted to be the dipole presented at La₂O₃/SiO₂ interface. An improvement in effective electron mobility without degrading the interfacial state density has been performed with thin La₂O ₃ insertion for HfO₂ MOSFET.

Original language	English
Title of host publication	ECS Transactions - Dielectrics for Nanosystems 3
Subtitle of host publication	Materials Science, Processing, Reliability, and Manufacturing
Pages	29-37
Number of pages	9
Edition	2
DOIs	https://doi.org/10.1149/1.2908613
State	Published - 2008
Event	3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting - Phoenix, AZ, United States Duration: 18 May 2008 → 22 May 2008

Publication series

Name	ECS Transactions
Number	2
Volume	13
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting
Country	United States
City	Phoenix, AZ
Period	18/05/08 → 22/05/08

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Kakushima, K., Okamoto, K., Adachi, M., Tachi, K., Sato, S., Kawanago, T., Song, J., Ahmet, P., Sugii, N., Tsutsui, K., Hattori, T., & Iwai, H. (2008). Impact of thin La₂O₃ insertion for HfO₂ MOSFET. In ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing (2 ed., pp. 29-37). (ECS Transactions; Vol. 13, No. 2). https://doi.org/10.1149/1.2908613

@inproceedings{725ef62ee7a74a4493c22952b8521de7,

title = "Impact of thin La2O3 insertion for HfO2 MOSFET",

abstract = "The impact of La2O3 insertion for HfO2 gated MOSFET is presented. The origin of a large negative shift in flat band voltage with La2O3 insertion has been carefully extracted to be the dipole presented at La2O3/SiO2 interface. An improvement in effective electron mobility without degrading the interfacial state density has been performed with thin La2O 3 insertion for HfO2 MOSFET.",

author = "K. Kakushima and K. Okamoto and M. Adachi and K. Tachi and S. Sato and T. Kawanago and J. Song and P. Ahmet and N. Sugii and K. Tsutsui and T. Hattori and H. Iwai",

year = "2008",

doi = "10.1149/1.2908613",

language = "English",

isbn = "9781566776271",

series = "ECS Transactions",

number = "2",

pages = "29--37",

booktitle = "ECS Transactions - Dielectrics for Nanosystems 3",

edition = "2",

note = "null ; Conference date: 18-05-2008 Through 22-05-2008",

}

Kakushima, K, Okamoto, K, Adachi, M, Tachi, K, Sato, S, Kawanago, T, Song, J, Ahmet, P, Sugii, N, Tsutsui, K, Hattori, T & Iwai, H 2008, Impact of thin La₂O₃ insertion for HfO₂ MOSFET. in ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing. 2 edn, ECS Transactions, no. 2, vol. 13, pp. 29-37, 3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting, Phoenix, AZ, United States, 18/05/08. https://doi.org/10.1149/1.2908613

Impact of thin La₂O₃ insertion for HfO₂ MOSFET. / Kakushima, K.; Okamoto, K.; Adachi, M.; Tachi, K.; Sato, S.; Kawanago, T.; Song, J.; Ahmet, P.; Sugii, N.; Tsutsui, K.; Hattori, T.; Iwai, H.

ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing. 2. ed. 2008. p. 29-37 (ECS Transactions; Vol. 13, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Impact of thin La2O3 insertion for HfO2 MOSFET

AU - Kakushima, K.

AU - Okamoto, K.

AU - Adachi, M.

AU - Tachi, K.

AU - Sato, S.

AU - Kawanago, T.

AU - Song, J.

AU - Ahmet, P.

AU - Sugii, N.

AU - Tsutsui, K.

AU - Hattori, T.

AU - Iwai, H.

PY - 2008

Y1 - 2008

N2 - The impact of La2O3 insertion for HfO2 gated MOSFET is presented. The origin of a large negative shift in flat band voltage with La2O3 insertion has been carefully extracted to be the dipole presented at La2O3/SiO2 interface. An improvement in effective electron mobility without degrading the interfacial state density has been performed with thin La2O 3 insertion for HfO2 MOSFET.

AB - The impact of La2O3 insertion for HfO2 gated MOSFET is presented. The origin of a large negative shift in flat band voltage with La2O3 insertion has been carefully extracted to be the dipole presented at La2O3/SiO2 interface. An improvement in effective electron mobility without degrading the interfacial state density has been performed with thin La2O 3 insertion for HfO2 MOSFET.

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U2 - 10.1149/1.2908613

DO - 10.1149/1.2908613

M3 - Conference contribution

AN - SCOPUS:55849116007

SN - 9781566776271

T3 - ECS Transactions

SP - 29

EP - 37

BT - ECS Transactions - Dielectrics for Nanosystems 3

Y2 - 18 May 2008 through 22 May 2008

ER -