Impact of thermal stability on the characteristics of complementary metal oxide semiconductor transistors with TiN metal gate

Meng Fan Wang*, Tiao Yuan Huang, Ya Chen Kao, Horng-Chih Lin, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

The effects of rapid thermal annealing (RTA) performed after source/drain (S/D) implantation on the characteristics of complementary metal-oxide-semiconductor (CMOS) transistors with a TiN metal gate were investigated thoroughly. It was shown that n-channel devices require a higher thermal budget in order to reduce junction leakage, compared to p-channel devices. It was also found that the flat-band voltage and oxide thickness are both affected by the annealing temperature, particularly for p-channel devices. In n-channel devices, the gate leakage current level is highly dependent on channel length and RTA temperatures. Further analysis indicated that the agglomeration phenomenon during the high-temperature RTA step occurs more easily as the metal gate length becomes narrower. When this happens, gate oxide integrity is degraded, resulting in an increased gate leakage of n-channel transistors.

Original languageEnglish
Pages (from-to)546-551
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number2 A
DOIs
StatePublished - 1 Feb 2002

Keywords

  • Agglomeration
  • Leakage
  • Metal gate
  • MOSFET

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