In this work, polarization-dependent time-dependent dielectric breakdown in ferroelectric HZO Ge MOSCAPs is presented. First, ferroelectric HZO Ge MOSCAPs with and without in-situ NH3 plasma interfacial layer treatment exhibit the two distinct remnant polarization (Pr). Secondly, the device with a larger Pr shows a higher gate leakage current and smaller time-to-breakdown (tBD) compared to the device with a smaller Pr. Then, a physical model based on the high probability of the electron tunneling accelerating the formation of the percolation path is proposed. Finally, the device with large Pr shows a lower extrapolated operating voltage. However, more than 1.5 V of the extracted operation voltage for 1% failure of 10 year lifetime in the device with large Pr still can be obtained.