Impact of surface orientation on Vth variability of FinFET

Yu Sheng Wu*, Ming Long Fan, Pin Su

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

We have investigated the impact of surface orientation on the V th variability of Si- and Ge-FinFET using both the analytical solution of Schrödinger equation and atomistic simulation. Our study indicates that, for ultra-scaled FinFET, the importance of tch variation increases due to the quantumconfinement effect. The Si-(100) and Ge-(111) surface show lower Vth sensitivity to tch variation as compared with other orientations. On the contrary, the quantum-confinement effect reduces the Vth sensitivity to L eff, and Si-(111) and Ge-(100) surface show lower Vth sensitivity as compared with other orientations. Our study may provide insights for device design and circuit optimization using advanced FinFET technologies.

Original languageEnglish
Title of host publication2010 Silicon Nanoelectronics Workshop, SNW 2010
DOIs
StatePublished - 22 Oct 2010
Event2010 15th Silicon Nanoelectronics Workshop, SNW 2010 - Honolulu, HI, United States
Duration: 13 Jun 201014 Jun 2010

Publication series

Name2010 Silicon Nanoelectronics Workshop, SNW 2010

Conference

Conference2010 15th Silicon Nanoelectronics Workshop, SNW 2010
CountryUnited States
CityHonolulu, HI
Period13/06/1014/06/10

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