Impact of structure enhanced defects multiplication on junction leakage

Bing-Yue Tsui*, Y. F. Hsieh, C. H. Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

A junction leakage mechanism induced by structure enhanced defects multiplication at bird's beak of field oxide (FOX) is reported for the first time. For the junction structure with poly-Si on FOX, the mask-edge-defects (MED) resulted from high dose implantation will lead to the formation of dislocations during back-end processing. The position of dislocations may be as deep as 1-2 μm from Si surface. The stress induced by interlayer dielectric film is believed to be the driving force for the multiplication of dislocations. Process modifications, including implantation dosage reduction, screen oxide removal after implantation, post-implantation annealing, and implantation without screen oxide, are shown to be able to suppress the leakage current slightly. Thus, prevention of MED formation is believed to be a fundamental solution of this problem.

Original languageEnglish
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
PublisherPubl by IEEE
Pages383-387
Number of pages5
ISBN (Print)0780313577
DOIs
StatePublished - 1 Jan 1994
EventProceedings of the 32nd Annual International Reliability Physics Proceedings - San Jose, CA, USA
Duration: 12 Apr 199414 Apr 1994

Publication series

NameAnnual Proceedings - Reliability Physics (Symposium)
ISSN (Print)0099-9512

Conference

ConferenceProceedings of the 32nd Annual International Reliability Physics Proceedings
CitySan Jose, CA, USA
Period12/04/9414/04/94

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