Self-heating induced transient hot carrier effects in high-voltage n-LDMOS are investigated. A novel LDMOS structure incorporating a metal contact in the bird's beak region is fabricated, which allows us to probe an internal voltage transient in hot carrier stress. The AC stress-frequency dependence of device degradation is characterized and evaluated by a two-dimensional numerical simulation. Our result shows that drain current degradation in AC stress is more serious than in DC stress because of the reduction of self-heating effect.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting, IEDM|
|State||Published - 1 Dec 2007|
|Event||2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States|
Duration: 10 Dec 2007 → 12 Dec 2007