Impact of self-heating effect on hot carrier degradation in high-voltage LDMOS

Chih Chang Cheng*, J. F. Lin, Ta-Hui Wang, T. H. Hsieh, J. T. Tzeng, Y. C. Jong, R. S. Liou, Samuel C. Pan, S. L. Hsu

*Corresponding author for this work

Research output: Contribution to journalConference article

18 Scopus citations

Abstract

Self-heating induced transient hot carrier effects in high-voltage n-LDMOS are investigated. A novel LDMOS structure incorporating a metal contact in the bird's beak region is fabricated, which allows us to probe an internal voltage transient in hot carrier stress. The AC stress-frequency dependence of device degradation is characterized and evaluated by a two-dimensional numerical simulation. Our result shows that drain current degradation in AC stress is more serious than in DC stress because of the reduction of self-heating effect.

Original languageEnglish
Article number4419090
Pages (from-to)881-884
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
StatePublished - 1 Dec 2007
Event2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
Duration: 10 Dec 200712 Dec 2007

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    Cheng, C. C., Lin, J. F., Wang, T-H., Hsieh, T. H., Tzeng, J. T., Jong, Y. C., Liou, R. S., Pan, S. C., & Hsu, S. L. (2007). Impact of self-heating effect on hot carrier degradation in high-voltage LDMOS. Technical Digest - International Electron Devices Meeting, IEDM, 881-884. [4419090]. https://doi.org/10.1109/IEDM.2007.4419090