Impact of quantum confinement on subthreshold swing and electrostatic integrity of ultra-thin-body GeOI and InGaAs-OI n-MOSFETs

Chang Hung Yu, Yu Sheng Wu, Vita Pi Ho Hu, Pin Su*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

This paper investigates the electrostatic integrity (EI) of ultra-thin-body (UTB) germanium-on-insulator (GeOI) and InGaAs-OI n-MOSFETs considering quantum confinement (QC) using a derived analytical solution of Schrdinger equation verified with TCAD numerical simulation. Although the electron conduction path of the high-mobility channel device can be far from the frontgate interface due to high channel permittivity, our study indicates that the quantum confinement effect can move the carrier centroid toward the frontgate and, therefore, improve the subthreshold swing (SS) of the UTB device. Since InGaAs, Ge, and Si channels exhibit different degrees of quantum confinement due to different quantization effective mass, the impact of quantum confinement has to be considered when one-to-one comparisons among UTB InGaAs-OI, GeOI, and SOI MOSFETs regarding the subthreshold swing and electrostatic integrity are made.

Original languageEnglish
Article number6035986
Pages (from-to)287-291
Number of pages5
JournalIEEE Transactions on Nanotechnology
Volume11
Issue number2
DOIs
StatePublished - 1 Mar 2012

Keywords

  • Electrostatic integrity (EI)
  • germanium-on-insulator (GeOI)
  • InGaAs-OI
  • quantum confinement (QC)
  • subthreshold swing (SS)
  • ultra-thin-body (UTB)

Fingerprint Dive into the research topics of 'Impact of quantum confinement on subthreshold swing and electrostatic integrity of ultra-thin-body GeOI and InGaAs-OI n-MOSFETs'. Together they form a unique fingerprint.

Cite this