Impact of quantum confinement on short-channel effects for ultrathin-body germanium-on-insulator MOSFETs

Yu Sheng Wu*, Hsin Yuan Hsieh, Pi-Ho Hu, Pin Su

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

This letter investigates the impact of quantum confinement (QC) on the short-channel effect (SCE) of ultrathin-body (UTB) and thin-buried-oxide germanium-on-insulator (GeOI) MOSFETs using an analytical solution of Schrdinger equation verified with TCAD simulation. Our study indicates that, although the QC effect increases the threshold voltage (Vth) roll-off when the channel thickness (Tch) is larger than a critical value (T ch,crit), it may decrease the Vth roll-off of GeOI MOSFETs when the Tch is smaller than Tch,crit. Since Ge and Si channels exhibit different degrees of confinement and Tch,crit, the impact of QC must be considered when one-to-one comparisons between UTB GeOI and Si-on-insulator MOSFETs regarding the SCE are made.

Original languageEnglish
Article number5654536
Pages (from-to)18-20
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number1
DOIs
StatePublished - 1 Jan 2011

Keywords

  • Germanium-on-insulator (GeOI)
  • quantum confinement (QC)
  • threshold voltage roll-off

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