Impact of quantum confinement on backgate-bias modulated threshold-voltage and subthreshold characteristics for ultra-thin-body GeOI MOSFETs

Chang Hung Yu*, Yu Sheng Wu, Vita Pi Ho Hu, Pin Su

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

This paper investigates the impact of quantum confinement (QC) on the backgate-bias (V bg) modulated subthreshold and threshold-voltage (V th) characteristics of ultra-thin-body germanium-on-insulator (UTB GeOI) MOSFETs using an analytical solution of the Schrdinger equation verified with TCAD numerical simulation. Our study indicates that the QC effect reduces the sensitivity of the subthreshold swing to V bg. In addition, the sensitivity of V th to V bg can be enhanced by the QC effect particularly for electrostatically well-behaved UTB MOSFETs with triangular potential well. Aside from that, the sensitivity of V th roll-off to V bg is reduced by the QC effect. Since Ge and Si channels exhibit different degrees of QC due to different quantization effective mass, the impact of QC has to be considered when one-to-one comparisons between GeOI and SOI MOSFETs regarding the backgate-bias modulated threshold-voltage and subthreshold characteristics are made. Our study may provide insights for multi-V th device/circuit designs using advanced UTB GeOI technologies.

Original languageEnglish
Article number6197706
Pages (from-to)1851-1855
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume59
Issue number7
DOIs
StatePublished - 11 May 2012

Keywords

  • Backgate bias
  • germanium-on-insulator (GeOI)
  • quantum confinement (QC)
  • ultra-thin body (UTB)

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