Impact of quantum capacitance on intrinsic inversion capacitance characteristics and inversion-charge loss for multigate III-V-on-Insulator nMOSFETs

Hsin Hung Shen, Shih Lun Shen, Chang Hung Yu, Pin Su

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

This paper investigates the impact of quantum capacitance on the intrinsic inversion-capacitance (Cinv) characteristics of high-mobility multigate III-V-on-insulator nMOSFETs through a numerical simulation corroborated by the theoretical calculation. Nonmonotonic Cinv characteristics stemming from the energy dependence of 1-D density-of-states and significant Cinv degradation due to quantum capacitance have been found in trigate In0.53Ga0.47As and InAs devices based on the ITRS 2018-2024 technology nodes. This paper indicates that, to compensate the excess inversion-charge (Qinv) loss due to quantum capacitance, the needed mobility gain of the trigate InGaAs and InAs devices (against the Si counterparts) should be at least ∼3× and ∼4×, respectively. This paper also suggests that the quantum-capacitance-induced Qinv loss can be mitigated by raising the fin aspect ratio of the III-V multigate device.

Original languageEnglish
Article number7349194
Pages (from-to)339-344
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume63
Issue number1
DOIs
StatePublished - 1 Jan 2016

Keywords

  • III-V MOSFET
  • Multigate MOSFET
  • Quantum capacitance

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