Impact of Q-time on the passivation of Al2O3/p- In0.53Ga0.47As interfaces using various surface treatments

Quang Ho Luc, Edward Yi Chang, Hai Dang Trinh, Yuen Yee Wong, Huy Binh Do, Yueh Chin Lin, Sheng Ping Wang, Min Chieh Yang, Hsing Chen Wu, Ke Hung Chen, Yi Hsien Liao, Sheng Hung Tu

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Abstract

In this article, we demonstrate the influences of atmosphere exposure duration between extrinsic chemical treatment and ALD chamber loading (Q-time) on the passivation effect of the Al2O3/p-In 0.53Ga0.47As interfaces. With the use of various chemical solutions and TMA pretreatment, nice capacitance-voltage (C-V) characteristics of Al2O3/p-In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) were obtained with different Q-times before the ALD-Al2O3 deposition. This confirms that Q-time is not the critical issue determining the Al2O 3/In0.53Ga0.47As interface quality. X-ray photoelectron spectroscopy (XPS) analyzes in conjunction with the electrical characterizations have implied that the InGaAs native oxides might not play a major role on the interface trap states formation.

Original languageEnglish
JournalECS Solid State Letters
Volume3
Issue number9
DOIs
StatePublished - 1 Jan 2014

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