Impact of Q-time on the passivation of Al2O3/p- In0.53Ga0.47As interfaces using various surface treatments

Quang Ho Luc; Edward Yi Chang; Hai Dang Trinh; Yuen Yee Wong; Huy Binh Do; Yueh Chin Lin; Sheng Ping Wang; Min Chieh Yang; Hsing Chen Wu; Ke Hung Chen; Yi Hsien Liao; Sheng Hung Tu

doi:10.1149/2.0011410ssl

Impact of Q-time on the passivation of Al₂O₃/p- In_0.53Ga_0.47As interfaces using various surface treatments

Quang Ho Luc, Edward Yi Chang, Hai Dang Trinh, Yuen Yee Wong, Huy Binh Do, Yueh Chin Lin, Sheng Ping Wang, Min Chieh Yang, Hsing Chen Wu, Ke Hung Chen, Yi Hsien Liao, Sheng Hung Tu

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In this article, we demonstrate the influences of atmosphere exposure duration between extrinsic chemical treatment and ALD chamber loading (Q-time) on the passivation effect of the Al₂O₃/p-In _0.53Ga_0.47As interfaces. With the use of various chemical solutions and TMA pretreatment, nice capacitance-voltage (C-V) characteristics of Al₂O₃/p-In_0.53Ga_0.47As metal-oxide-semiconductor capacitors (MOSCAPs) were obtained with different Q-times before the ALD-Al₂O₃ deposition. This confirms that Q-time is not the critical issue determining the Al₂O ₃/In_0.53Ga_0.47As interface quality. X-ray photoelectron spectroscopy (XPS) analyzes in conjunction with the electrical characterizations have implied that the InGaAs native oxides might not play a major role on the interface trap states formation.

Original language	English
Journal	ECS Solid State Letters
Volume	3
Issue number	9
DOIs	https://doi.org/10.1149/2.0011410ssl
State	Published - 1 Jan 2014

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@article{72fba8ddc4b1455baa937f35087e9b9e,

title = "Impact of Q-time on the passivation of Al2O3/p- In0.53Ga0.47As interfaces using various surface treatments",

abstract = "In this article, we demonstrate the influences of atmosphere exposure duration between extrinsic chemical treatment and ALD chamber loading (Q-time) on the passivation effect of the Al2O3/p-In 0.53Ga0.47As interfaces. With the use of various chemical solutions and TMA pretreatment, nice capacitance-voltage (C-V) characteristics of Al2O3/p-In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) were obtained with different Q-times before the ALD-Al2O3 deposition. This confirms that Q-time is not the critical issue determining the Al2O 3/In0.53Ga0.47As interface quality. X-ray photoelectron spectroscopy (XPS) analyzes in conjunction with the electrical characterizations have implied that the InGaAs native oxides might not play a major role on the interface trap states formation.",

author = "Luc, {Quang Ho} and Chang, {Edward Yi} and Trinh, {Hai Dang} and Wong, {Yuen Yee} and Do, {Huy Binh} and Lin, {Yueh Chin} and Wang, {Sheng Ping} and Yang, {Min Chieh} and Wu, {Hsing Chen} and Chen, {Ke Hung} and Liao, {Yi Hsien} and Tu, {Sheng Hung}",

year = "2014",

month = jan,

day = "1",

doi = "10.1149/2.0011410ssl",

language = "English",

volume = "3",

journal = "ECS Solid State Letters",

issn = "2162-8742",

publisher = "The Electrochemical Society",

number = "9",

}

Impact of Q-time on the passivation of Al₂O₃/p- In_0.53Ga_0.47As interfaces using various surface treatments. / Luc, Quang Ho; Chang, Edward Yi; Trinh, Hai Dang; Wong, Yuen Yee; Do, Huy Binh; Lin, Yueh Chin; Wang, Sheng Ping; Yang, Min Chieh; Wu, Hsing Chen; Chen, Ke Hung; Liao, Yi Hsien; Tu, Sheng Hung.

In: ECS Solid State Letters, Vol. 3, No. 9, 01.01.2014.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Impact of Q-time on the passivation of Al2O3/p- In0.53Ga0.47As interfaces using various surface treatments

AU - Luc, Quang Ho

AU - Chang, Edward Yi

AU - Trinh, Hai Dang

AU - Wong, Yuen Yee

AU - Do, Huy Binh

AU - Lin, Yueh Chin

AU - Wang, Sheng Ping

AU - Yang, Min Chieh

AU - Wu, Hsing Chen

AU - Chen, Ke Hung

AU - Liao, Yi Hsien

AU - Tu, Sheng Hung

PY - 2014/1/1

Y1 - 2014/1/1

N2 - In this article, we demonstrate the influences of atmosphere exposure duration between extrinsic chemical treatment and ALD chamber loading (Q-time) on the passivation effect of the Al2O3/p-In 0.53Ga0.47As interfaces. With the use of various chemical solutions and TMA pretreatment, nice capacitance-voltage (C-V) characteristics of Al2O3/p-In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) were obtained with different Q-times before the ALD-Al2O3 deposition. This confirms that Q-time is not the critical issue determining the Al2O 3/In0.53Ga0.47As interface quality. X-ray photoelectron spectroscopy (XPS) analyzes in conjunction with the electrical characterizations have implied that the InGaAs native oxides might not play a major role on the interface trap states formation.

AB - In this article, we demonstrate the influences of atmosphere exposure duration between extrinsic chemical treatment and ALD chamber loading (Q-time) on the passivation effect of the Al2O3/p-In 0.53Ga0.47As interfaces. With the use of various chemical solutions and TMA pretreatment, nice capacitance-voltage (C-V) characteristics of Al2O3/p-In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) were obtained with different Q-times before the ALD-Al2O3 deposition. This confirms that Q-time is not the critical issue determining the Al2O 3/In0.53Ga0.47As interface quality. X-ray photoelectron spectroscopy (XPS) analyzes in conjunction with the electrical characterizations have implied that the InGaAs native oxides might not play a major role on the interface trap states formation.

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JO - ECS Solid State Letters

JF - ECS Solid State Letters

SN - 2162-8742

IS - 9

ER -

Impact of Q-time on the passivation of Al₂O₃/p- In_0.53Ga_0.47As interfaces using various surface treatments

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