Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO2-Based Oxide RRAM and Conductive-Bridge RAM Devices

Tsung Ling Tsai, Hsiang Yu Chang, Fa Shen Jiang, Tseung-Yuen Tseng

Research output: Contribution to journalArticlepeer-review

32 Scopus citations


In this letter, we report the impact of post-oxide deposition annealing on the performance of HfO2-based resistive random access memory (RRAM) devices, namely, oxygen-ion-based oxide RRAM (OxRRAM) and Cu-ion-based conductive-bridge RAM (CBRAM) devices. Considerable degradation of the ON/OFF ratio and switching properties was observed in the OxRRAM devices after high-temperature annealing in vacuum, which is attributed to a considerable amount of oxygen vacancies created in the switching layer. However, the substantial improvement in device performance, such as stable switching, high switching cycles, decreased set/reset voltages, and near-100% device yield, were obtained in the CBRAM devices during the post-HfO2 deposition annealing in vacuum.

Original languageEnglish
Article number7268841
Pages (from-to)1146-1148
Number of pages3
JournalIEEE Electron Device Letters
Issue number11
StatePublished - 1 Nov 2015


  • OxRRAM
  • Oxygen vacancies

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