Impact of post deposition annealing on resistive switching in Ga2O3-based conductive-bridge RAM devices

Kai Jhih Gan, Po-Tsun Liu*, Ta Chun Chien, Dun Bao Ruan, Yu Chuan Chiu, Simon M. Sze

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We study the influence of post-deposition annealing on the electrical properties of performance of Ga2O3-based Cu-ion-based conductive-bridge RAM (CBRAM) devices. Amorphous gallium oxide (Ga2O3) thin films were fabricated by RF sputtering at room temperature. The deposited films were annealed from the different temperatures and gas ambient. Their resistive switching characteristics are compared to determine the role of temperature and atmosphere in the annealing process on performance of these memory devices. The substantial improvement in device performance, such as stable switching, high switching cycles, and increased memory window, were obtained in the CBRAM devices during the post- Ga2O3 deposition annealing in pure nitrogen (N2) ambient.

Original languageEnglish
Title of host publicationProceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
ISBN (Electronic)9781538614457
DOIs
StatePublished - May 2018
Event7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, Taiwan
Duration: 7 May 20189 May 2018

Publication series

NameProceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

Conference

Conference7th International Symposium on Next-Generation Electronics, ISNE 2018
CountryTaiwan
CityTaipei
Period7/05/189/05/18

Keywords

  • Annealing
  • CBRAM
  • Ga2O3

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