Impact of polarization relaxation on ferroelectric memory performance

Reza Moazzami*, Norman Abt, Yoav Nissan-Cohen, William H. Shepherd, Michael P. Brassington, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference article

16 Scopus citations

Abstract

The authors have performed high-speed single-shot pulse measurements of ferroelectric capacitors that reveal a relaxation of the remanent polarization. This relaxation occurs within a few microseconds and may be attributed to the switching of domains with low effective coercive fields. The relaxation also manifests itself as a nonzero logic 0 signal in nonvolatile ferroelectric memories. A test sequence that determines the contribution of these volatile domains for any specified peak applied field is described. Using this sequence, the worst-case signal, i.e. the nonvolatile polarization of the ferroelectric film, for a nonvolatile ferroelectric memory is determined. Endurance characteristics at high switching fields exhibit a total collapse of this component. However, alternative technologies demonstrate the potential for very high endurance (>1011 read/write cycles).

Original languageEnglish
Pages (from-to)61-62
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 1 Dec 1991
Event1991 Symposium on VLSI Technology - Oiso, Jpn
Duration: 28 May 199130 May 1991

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    Moazzami, R., Abt, N., Nissan-Cohen, Y., Shepherd, W. H., Brassington, M. P., & Hu, C-M. (1991). Impact of polarization relaxation on ferroelectric memory performance. Digest of Technical Papers - Symposium on VLSI Technology, 61-62.