TY - JOUR
T1 - Impact of polarization relaxation on ferroelectric memory performance
AU - Moazzami, Reza
AU - Abt, Norman
AU - Nissan-Cohen, Yoav
AU - Shepherd, William H.
AU - Brassington, Michael P.
AU - Hu, Chen-Ming
PY - 1991/12/1
Y1 - 1991/12/1
N2 - The authors have performed high-speed single-shot pulse measurements of ferroelectric capacitors that reveal a relaxation of the remanent polarization. This relaxation occurs within a few microseconds and may be attributed to the switching of domains with low effective coercive fields. The relaxation also manifests itself as a nonzero logic 0 signal in nonvolatile ferroelectric memories. A test sequence that determines the contribution of these volatile domains for any specified peak applied field is described. Using this sequence, the worst-case signal, i.e. the nonvolatile polarization of the ferroelectric film, for a nonvolatile ferroelectric memory is determined. Endurance characteristics at high switching fields exhibit a total collapse of this component. However, alternative technologies demonstrate the potential for very high endurance (>1011 read/write cycles).
AB - The authors have performed high-speed single-shot pulse measurements of ferroelectric capacitors that reveal a relaxation of the remanent polarization. This relaxation occurs within a few microseconds and may be attributed to the switching of domains with low effective coercive fields. The relaxation also manifests itself as a nonzero logic 0 signal in nonvolatile ferroelectric memories. A test sequence that determines the contribution of these volatile domains for any specified peak applied field is described. Using this sequence, the worst-case signal, i.e. the nonvolatile polarization of the ferroelectric film, for a nonvolatile ferroelectric memory is determined. Endurance characteristics at high switching fields exhibit a total collapse of this component. However, alternative technologies demonstrate the potential for very high endurance (>1011 read/write cycles).
UR - http://www.scopus.com/inward/record.url?scp=0026366631&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0026366631
SP - 61
EP - 62
JO - Digest of Technical Papers - Symposium on VLSI Technology
JF - Digest of Technical Papers - Symposium on VLSI Technology
SN - 0743-1562
Y2 - 28 May 1991 through 30 May 1991
ER -