Impact of plasma treatment on structure and electrical properties of porous low dielectric constant SiCOH material

Yi Lung Cheng*, Jun Fu Huang, Yu Min Chang, Leu-Jih Perng

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

Low dielectric constant (low-k) porous films are needed for advanced technologies to improve signal propagation. The integration of porous low-k films faces more severe challenges due to the presence of porosity. Plasma treatments have been considered to be critical steps to impact the low-k films' properties. In this study, the effect of various H2/He plasma treatments on the porous low-k dielectrics deposited by plasma enhanced chemical vapor deposition was investigated. All the plasma treatments resulted in the formation of a thin and dense layer on the surface of the porous low-k films. Additionally, the properties of this top dense layer are modified and changed for the standard H2/He plasma treatment, leading to a degraded electrical and reliability performance. However, H2/He plasma-treated low-k dielectric by the remote plasma method shows a better electrical and reliability performance. As a result, the remote plasma treatment on the porous low-k dielectrics appears to be a promising method in the future interlayer dielectrics application.

Original languageEnglish
Pages (from-to)537-540
Number of pages4
JournalThin Solid Films
Volume544
DOIs
StatePublished - 1 Oct 2013

Keywords

  • Breakdown
  • Low-k dielectric
  • Plasma
  • Reliability
  • Remote plasma

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