Impact of plasma charging damage and diode protection on scaled thin oxide

Hyungcheol Shin*, Zhi Jian Ma, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

16 Scopus citations

Abstract

The plasma charging stress can be quantified sensitively using differential pair circuits as well as MOSFETs. We have developed a quantitative model for thin oxide plasma charging damage by examining the oxide thickness dependence of charging current. The model predicts the oxide thickness dependence of plasma charging successfully. A quantitative model of protection diodes for wafer charging effect on future thinner oxides is also presented.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
PublisherPubl by IEEE
Pages467-470
Number of pages4
ISBN (Print)0780314506
DOIs
StatePublished - 1 Dec 1993
EventProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
Duration: 5 Dec 19938 Dec 1993

Publication series

NameTechnical Digest - International Electron Devices Meeting
ISSN (Print)0163-1918

Conference

ConferenceProceedings of the 1993 IEEE International Electron Devices Meeting
CityWashington, DC, USA
Period5/12/938/12/93

Fingerprint Dive into the research topics of 'Impact of plasma charging damage and diode protection on scaled thin oxide'. Together they form a unique fingerprint.

Cite this