Impact of plasma charging damage and diode protection on scaled thin oxide

Hyungcheol Shin; Zhi Jian Ma; Chen-Ming Hu

doi:10.1109/IEDM.1993.347309

Impact of plasma charging damage and diode protection on scaled thin oxide

Hyungcheol Shin^*, Zhi Jian Ma, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

16 Scopus citations

Abstract

The plasma charging stress can be quantified sensitively using differential pair circuits as well as MOSFETs. We have developed a quantitative model for thin oxide plasma charging damage by examining the oxide thickness dependence of charging current. The model predicts the oxide thickness dependence of plasma charging successfully. A quantitative model of protection diodes for wafer charging effect on future thinner oxides is also presented.

Original language	English
Title of host publication	Technical Digest - International Electron Devices Meeting
Editors	Anon
Publisher	Publ by IEEE
Pages	467-470
Number of pages	4
ISBN (Print)	0780314506
DOIs	https://doi.org/10.1109/IEDM.1993.347309
State	Published - 1 Dec 1993
Event	Proceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA Duration: 5 Dec 1993 → 8 Dec 1993

Publication series

Name	Technical Digest - International Electron Devices Meeting
ISSN (Print)	0163-1918

Conference

Conference	Proceedings of the 1993 IEEE International Electron Devices Meeting
City	Washington, DC, USA
Period	5/12/93 → 8/12/93

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abstract = "The plasma charging stress can be quantified sensitively using differential pair circuits as well as MOSFETs. We have developed a quantitative model for thin oxide plasma charging damage by examining the oxide thickness dependence of charging current. The model predicts the oxide thickness dependence of plasma charging successfully. A quantitative model of protection diodes for wafer charging effect on future thinner oxides is also presented.",

author = "Hyungcheol Shin and Ma, {Zhi Jian} and Chen-Ming Hu",

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Shin, H, Ma, ZJ & Hu, C-M 1993, Impact of plasma charging damage and diode protection on scaled thin oxide. in Anon (ed.), Technical Digest - International Electron Devices Meeting. Technical Digest - International Electron Devices Meeting, Publ by IEEE, pp. 467-470, Proceedings of the 1993 IEEE International Electron Devices Meeting, Washington, DC, USA, 5/12/93. https://doi.org/10.1109/IEDM.1993.347309

Impact of plasma charging damage and diode protection on scaled thin oxide. / Shin, Hyungcheol; Ma, Zhi Jian; Hu, Chen-Ming.

Technical Digest - International Electron Devices Meeting. ed. / Anon. Publ by IEEE, 1993. p. 467-470 (Technical Digest - International Electron Devices Meeting).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Impact of plasma charging damage and diode protection on scaled thin oxide

AU - Shin, Hyungcheol

AU - Ma, Zhi Jian

AU - Hu, Chen-Ming

PY - 1993/12/1

Y1 - 1993/12/1

N2 - The plasma charging stress can be quantified sensitively using differential pair circuits as well as MOSFETs. We have developed a quantitative model for thin oxide plasma charging damage by examining the oxide thickness dependence of charging current. The model predicts the oxide thickness dependence of plasma charging successfully. A quantitative model of protection diodes for wafer charging effect on future thinner oxides is also presented.

AB - The plasma charging stress can be quantified sensitively using differential pair circuits as well as MOSFETs. We have developed a quantitative model for thin oxide plasma charging damage by examining the oxide thickness dependence of charging current. The model predicts the oxide thickness dependence of plasma charging successfully. A quantitative model of protection diodes for wafer charging effect on future thinner oxides is also presented.

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U2 - 10.1109/IEDM.1993.347309

DO - 10.1109/IEDM.1993.347309

M3 - Conference contribution

AN - SCOPUS:0027813760

SN - 0780314506

T3 - Technical Digest - International Electron Devices Meeting

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BT - Technical Digest - International Electron Devices Meeting

A2 - Anon, null

PB - Publ by IEEE

Y2 - 5 December 1993 through 8 December 1993

ER -

Impact of plasma charging damage and diode protection on scaled thin oxide

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