Impact of parasitic capacitance and ferroelectric parameters on negative capacitance FinFET characteristics

Sourabh Khandelwal*, Juan Pablo Duarte, Asif Islam Khan, Sayeef Salahuddin, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticle

40 Scopus citations

Abstract

In this letter, we present a compact model and analyze the impact of key parameters on negative capacitance FinFET (NC-FinFET) device operation. The developed model solves FinFET device electrostatics and Landau-Khalatnikov equations self-consistently. An experimental NC-FinFET device is accurately modeled and the experimentally calibrated parameters are used to analyze the NC-FinFETs device performance and its dependence on several key parameters.

Original languageEnglish
Article number7742929
Pages (from-to)142-144
Number of pages3
JournalIEEE Electron Device Letters
Volume38
Issue number1
DOIs
StatePublished - 1 Jan 2017

Keywords

  • NC-FETs
  • sub-60 mV/decade devices

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