Impact of oxygen vacancy on the photo-electrical properties of In2O3-based thin-film transistor by doping Ga

Kuan Yu Chen, Chih Chiang Yang*, Yan Kuin Su, Zi Hao Wang, Hsin-Chieh Yu

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations


In this study, amorphous indium gallium oxide thin-film transistors (IGO TFTs) were fabricated by co-sputtering. Three samples with different deposition powers of the In2O3 target, namely, sample A with 50W deposition power, sample B with 60Wdeposition power, and sample C with 70 W deposition power, were investigated. The device performance revealed that oxygen vacancies are strongly dependent on indium content. However, when the deposition power of the In2O3 target increased, the number of oxygen vacancies, which act as charge carriers to improve the device performance, increased. The best performance was recorded at a threshold voltage of 1.1 V, on-off current ratio of 4.5 → 106, and subthreshold swing of 3.82 V/dec in sample B. Meanwhile, the optical properties of sample B included a responsivity of 0.16 A/W and excellent ultraviolet-to-visible rejection ratio of 8 → 104. IGO TFTs may act as photodetectors according to the results obtained for optical properties.

Original languageEnglish
Article number737
Issue number5
StatePublished - 1 Mar 2019


  • Co-sputtering
  • Oxygen vacancies
  • Thin-film transistor

Fingerprint Dive into the research topics of 'Impact of oxygen vacancy on the photo-electrical properties of In<sub>2</sub>O<sub>3</sub>-based thin-film transistor by doping Ga'. Together they form a unique fingerprint.

  • Cite this