Impact of on-chip interconnect frequency-dependent R(f) L(f) on digital and RF design

Yu Cao*, Xuejue Huang, Dennis Sylvester, Tsu Jae King, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

On-chip global interconnect exhibits clear frequency dependence in both resistance (R) and inductance (L). In this paper, its impact on modern digital and radio frequency (RF) circuit design is examined. First, a physical and compact ladder circuit model is developed to capture this behavior, which only employs frequency independent R and L elements, and thus, supports transient analysis. Using this new model we demonstrate that the use of dc values for R and L is sufficient for timing analysis (i.e., 50% delay and slew rate) in digital designs. However, RL frequency dependence is critical for the analysis of signal integrity, shield line insertion, power supply stability, and RF inductor performance.

Original languageEnglish
Pages (from-to)158-162
Number of pages5
JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume13
Issue number1
DOIs
StatePublished - 1 Jan 2005

Keywords

  • Delay
  • Frequency-dependence
  • Inductance
  • Noise
  • Over-shoot
  • Quality factor
  • Resistance
  • Slew rate

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