Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process

T. Y. Chang*, T. F. Lei, Tien-Sheng Chao, S. W. Chen, L. M. Kao, S. K. Chen, A. Tuan, T. P. Su

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In our previous study, using NF3 annealed poly-Si to improve gate oxide integrity for Co-silicide process has been proposed [SSDM, 1998, p. 164]. It is very interesting and important to know the mechanism of both F and N incorporation in the SiO2 and Co-salicide. In this study, F and/or N will be implanted into poly-Si with/without Co-salicide process, to identify the interaction of N and F in the SiO2 and Co-salicide process. In our work, we will describe the optimized structure and F/N incorporation for Co-silicide process.

Original languageEnglish
Pages (from-to)1097-1101
Number of pages5
JournalSolid-State Electronics
Volume46
Issue number8
DOIs
StatePublished - 1 Aug 2002

Keywords

  • Breakdown charge and stress induce leakage current (SILC)
  • Co-salicide
  • Fluorine and nitrogen implantation
  • Gate oxide integrity (GOI)
  • Leakage performance

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