Impact of negative-bias-temperature-instability on channel bulk of polysilicon TFT by gated PIN diode analysis

Chen Shuo Huang*, Po-Tsun Liu

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

In this study, negative-bias-temperature-instability (NBTI) stress induced interface, and bulk states of polycrystalline silicon (poly-Si) film were identified by using gated poly-Si P-intrinsic-N (PIN) diodes. The generation of reverse current was proportional to the quantity of defects in the poly-Si of the gated diode device. Experimental results revealed NBTI degradation has a spatial distribution in the poly-Si film and demonstrated that the resultant generation of poly-Si bulk states causes the elevated drain leakage current of thin-film transistors (TFTs). We conclude that grain boundaries, with enriched hydrogenated silicon bonds in the bulk of poly-Si, interact electrochemically with hole-carriers.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume14
Issue number5
DOIs
StatePublished - 16 Mar 2011

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