Impact of multi-domain interaction on on-state characteristics of mfis-Type 2d negative-capacitance fets

Po Sheng Lu, Chia Chen Lin, Pin Su

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, with the aid of segmented SPICE simulation, we investigate the impact of multi-domain interaction on MFIS-Type 2D Negative-Capacitance FETs with emphasis on the ON-state characteristics. Our study indicates that the multi-domain interaction enhances the lateral electric field for the MFIS device, leading to a higher ON-current. In addition, the multi-domain interaction increases the saturation drain voltage of the MFIS device due to the rise of the internal voltage near the drain-side. Our study also suggests that the negative differential resistance (NDR) effect present in MFIS devices may result from the strong domain interaction in addition to negative DIBL.

Original languageEnglish
Title of host publication2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728109428
DOIs
StatePublished - Apr 2019
Event2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 - Hsinchu, Taiwan
Duration: 22 Apr 201925 Apr 2019

Publication series

Name2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019

Conference

Conference2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
CountryTaiwan
CityHsinchu
Period22/04/1925/04/19

Fingerprint Dive into the research topics of 'Impact of multi-domain interaction on on-state characteristics of mfis-Type 2d negative-capacitance fets'. Together they form a unique fingerprint.

Cite this