Impact of mosfet gate-oxide reliability on CMOS operational amplifiers in a 130-nm low-voltage CMOS process

Jung Sheng Chen*, Ming-Dou Ker

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

The effects of the gate-oxide reliability of MOSFETs on operational amplifiers were investigated with the two-stage and folded-cascode structures in a 130-nm low-voltage CMOS process. The tested operating conditions include unity-gain buffer (close-loop configuration) and comparator (open-loop configuration) under different input frequencies and signals. After overstress, the small-signal parameters, such as small-signal gain, unity-gain frequency, and phase margin, were measured to verify the impact of gate-oxide reliability on circuit performances of the operational amplifier. The gate-oxide reliability can be improved by the stacked configuration in the operational amplifier with folded-cascode structure. A simple equivalent device model of gate-oxide reliability for CMOS devices in analog circuits was investigated and simulated.

Original languageEnglish
Title of host publication2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual
Pages423-430
Number of pages8
DOIs
StatePublished - 15 Dec 2005
Event2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual - San Jose, CA, United States
Duration: 17 Apr 200521 Apr 2005

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Conference

Conference2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual
CountryUnited States
CitySan Jose, CA
Period17/04/0521/04/05

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    Chen, J. S., & Ker, M-D. (2005). Impact of mosfet gate-oxide reliability on CMOS operational amplifiers in a 130-nm low-voltage CMOS process. In 2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual (pp. 423-430). (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/RELPHY.2005.1493123