Impact of material properties and device architecture on the device performance for a gate all around nanowire tunneling FET

S. K. Singh, A. Gupta, H. W. Yu, V. Nagarajan, D. Anandan, R. K. Kakkerla, E. Y. Chang

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

This paper systematically investigates the impact of gate dielectric, channel dimensional profile and the interface trap charge density on a homojunction indium-arsenide (InAs) gate all around nanowire tunneling FET (HJ-GAA-TFET). Device models were calibrated against the experimental data and simulations were performed to investigate the underlying physics. Device on-off (I on /I off ) ratio was considered as key figure-of-merit (FOM) to improve. It is observed that the off current (I off ) is a weak function of dielectric constant, however, the on current (I on ) increases from 1.51 × 10 -7 A μm -1 to 1.79 × 10 -6 A μm -1 as the dielectric constant increases from SiO 2 to La 2 O 3 . It was also observed that as the diameter increases, both I on and I off increases. I on /I off ratio is independent for higher channel lengths but as the channel length is reduced below 30 nm, I off increases causing degradation in I on /I off ratio. Finally, the effect of interface traps was realised on the I on /I off ratio. Interface traps impact the flat-band voltage causing a shift in the device performance. It is observed that as the trap density increases, I off degrades rapidly by ∼3 orders in magnitude.

Original languageEnglish
Article number114002
JournalMaterials Research Express
Volume4
Issue number11
DOIs
StatePublished - 1 Nov 2017

Keywords

  • band-to-band tunneling (BTBT)
  • interface trap charge (ITC)
  • sub-threshold swing (SS)
  • tunnel FET (TFET)

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