Impact of inter-metal-oxide deposition condition on NMOS and PMOS transistor hot carrier effect

Chun Jiang*, Chen-Ming Hu, C. H. Chen, P. N. Tseng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

The hot carrier effect of NMOSFETs and PMOSFETs has been investigated for different inter-metal-oxide (IMO) deposition conditions. It was found that the hot carrier effect lifetime of NMOSFETs using silane-based oxide deposition can be more than two orders of magnitude longer than that of NMOSFETs using tetraethylorthosilicate (TEOS) based deposition, while PMOSFETs exhibit more net electron trapping. TEOS IMO apparently increases the rate of hole trapping and hole-induced generation of bulk and interface traps. A Si-rich oxide deposition condition improves the hot carrier lifetime, but does not overcome the deleterious effect of an additional TEOS oxide layer. IMO only influences the charge trapping properties of gate oxide interface in the vicinity of the source-drain gate edges and therefore affects short channel devices more strongly.

Original languageEnglish
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
PublisherPubl by IEEE
Pages122-126
Number of pages5
ISBN (Print)078030473X
DOIs
StatePublished - 1 Mar 1992
EventProceedings of the 30th Annual International Reliability Physics Symposium - San Diego, CA, USA
Duration: 31 Mar 19922 Apr 1992

Publication series

NameAnnual Proceedings - Reliability Physics (Symposium)
ISSN (Print)0099-9512

Conference

ConferenceProceedings of the 30th Annual International Reliability Physics Symposium
CitySan Diego, CA, USA
Period31/03/922/04/92

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