Impact of HfSiON induced flicker noise on scaling of future mixed-signal CMOS

Yuri Yasuda; Chung Hsun Lin; Tsu Jae King Liu; Chen-Ming Hu

doi:10.1109/VLSIT.2006.1705239

Impact of HfSiON induced flicker noise on scaling of future mixed-signal CMOS

Yuri Yasuda^*, Chung Hsun Lin, Tsu Jae King Liu, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

It is shown for the first time that HfSiON gate dielectric thickness has a strong impact on the flicker (1/f) noise of devices with Lg < 1μm. We have developed a simple model for both gate length (Lg) and HfSiON thickness dependences of N-FET flicker noise, based on excess traps at the gate-edges. P-FET noise does not exhibit such strong dependences. Scaling of future analog devices with high-k gate stack may be limited by noise considerations.

Original language	English
Title of host publication	2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers
Pages	106-107
Number of pages	2
DOIs	https://doi.org/10.1109/VLSIT.2006.1705239
State	Published - 1 Dec 2006
Event	2006 Symposium on VLSI Technology, VLSIT - Honolulu, HI, United States Duration: 13 Jun 2006 → 15 Jun 2006

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Conference

Conference	2006 Symposium on VLSI Technology, VLSIT
Country	United States
City	Honolulu, HI
Period	13/06/06 → 15/06/06

Keywords

Analog
Flicker noise
HfSiON
Mixed-signal

Access to Document

10.1109/VLSIT.2006.1705239

Fingerprint Dive into the research topics of 'Impact of HfSiON induced flicker noise on scaling of future mixed-signal CMOS'. Together they form a unique fingerprint.

Cite this

@inproceedings{e1ef1a9856c24001865f79641ced342c,

title = "Impact of HfSiON induced flicker noise on scaling of future mixed-signal CMOS",

abstract = "It is shown for the first time that HfSiON gate dielectric thickness has a strong impact on the flicker (1/f) noise of devices with Lg < 1μm. We have developed a simple model for both gate length (Lg) and HfSiON thickness dependences of N-FET flicker noise, based on excess traps at the gate-edges. P-FET noise does not exhibit such strong dependences. Scaling of future analog devices with high-k gate stack may be limited by noise considerations.",

keywords = "Analog, Flicker noise, HfSiON, Mixed-signal",

author = "Yuri Yasuda and Lin, {Chung Hsun} and Liu, {Tsu Jae King} and Chen-Ming Hu",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/VLSIT.2006.1705239",

language = "English",

isbn = "1424400058",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

pages = "106--107",

booktitle = "2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers",

note = "null ; Conference date: 13-06-2006 Through 15-06-2006",

}

Yasuda, Y, Lin, CH, Liu, TJK & Hu, C-M 2006, Impact of HfSiON induced flicker noise on scaling of future mixed-signal CMOS. in 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers., 1705239, Digest of Technical Papers - Symposium on VLSI Technology, pp. 106-107, 2006 Symposium on VLSI Technology, VLSIT, Honolulu, HI, United States, 13/06/06. https://doi.org/10.1109/VLSIT.2006.1705239

Impact of HfSiON induced flicker noise on scaling of future mixed-signal CMOS. / Yasuda, Yuri; Lin, Chung Hsun; Liu, Tsu Jae King; Hu, Chen-Ming.

2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers. 2006. p. 106-107 1705239 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Impact of HfSiON induced flicker noise on scaling of future mixed-signal CMOS

AU - Yasuda, Yuri

AU - Lin, Chung Hsun

AU - Liu, Tsu Jae King

AU - Hu, Chen-Ming

PY - 2006/12/1

Y1 - 2006/12/1

N2 - It is shown for the first time that HfSiON gate dielectric thickness has a strong impact on the flicker (1/f) noise of devices with Lg < 1μm. We have developed a simple model for both gate length (Lg) and HfSiON thickness dependences of N-FET flicker noise, based on excess traps at the gate-edges. P-FET noise does not exhibit such strong dependences. Scaling of future analog devices with high-k gate stack may be limited by noise considerations.

AB - It is shown for the first time that HfSiON gate dielectric thickness has a strong impact on the flicker (1/f) noise of devices with Lg < 1μm. We have developed a simple model for both gate length (Lg) and HfSiON thickness dependences of N-FET flicker noise, based on excess traps at the gate-edges. P-FET noise does not exhibit such strong dependences. Scaling of future analog devices with high-k gate stack may be limited by noise considerations.

KW - Analog

KW - Flicker noise

KW - HfSiON

KW - Mixed-signal

UR - http://www.scopus.com/inward/record.url?scp=37249093083&partnerID=8YFLogxK

U2 - 10.1109/VLSIT.2006.1705239

DO - 10.1109/VLSIT.2006.1705239

M3 - Conference contribution

AN - SCOPUS:37249093083

SN - 1424400058

SN - 9781424400058

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 106

EP - 107

BT - 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers

Y2 - 13 June 2006 through 15 June 2006

ER -

Impact of HfSiON induced flicker noise on scaling of future mixed-signal CMOS

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Cite this