Impact of HfSiON induced flicker noise on scaling of future mixed-signal CMOS

Yuri Yasuda*, Chung Hsun Lin, Tsu Jae King Liu, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

It is shown for the first time that HfSiON gate dielectric thickness has a strong impact on the flicker (1/f) noise of devices with Lg < 1μm. We have developed a simple model for both gate length (Lg) and HfSiON thickness dependences of N-FET flicker noise, based on excess traps at the gate-edges. P-FET noise does not exhibit such strong dependences. Scaling of future analog devices with high-k gate stack may be limited by noise considerations.

Original languageEnglish
Title of host publication2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers
Pages106-107
Number of pages2
DOIs
StatePublished - 1 Dec 2006
Event2006 Symposium on VLSI Technology, VLSIT - Honolulu, HI, United States
Duration: 13 Jun 200615 Jun 2006

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Conference

Conference2006 Symposium on VLSI Technology, VLSIT
CountryUnited States
CityHonolulu, HI
Period13/06/0615/06/06

Keywords

  • Analog
  • Flicker noise
  • HfSiON
  • Mixed-signal

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